1N4151 Vishay / Small Signal & Opto Products (SSP), 1N4151 Datasheet - Page 2

• Manufacturer Part Number: 1N4151
• Description: Diode; 300 mA; 75 V (Min.); 1.0 V (Max.); 440 mW; 350 K/W; 75 V; 2 pF (Max.)
• Manufacturer: Vishay / Small Signal & Opto Products (SSP)

Specifications of 1N4151

• Capacitance: 2 pF (Max.)
• Capacitance, Junction: 2 pF
• Current, Forward: 300 mA
• Current, Reverse: 14 nA
• Current, Surge: 2 A
• Package Type: DO-35
• Power Dissipation: 500 mW
• Primary Type: Rectifier
• Speed, Switching: Standard
• Temperature, Junction, Maximum: +175 °C
• Thermal Resistance, Junction To Ambient: 350 K⁄W
• Time, Recovery: 4 ns
• Time, Reverse Recovery: 4 nS (Max.)
• Voltage, Breakdown: 75 V (Min.)
• Voltage, Forward: 880 mV
• Voltage, Repetitive Peak Reverse: 75 V
• Voltage, Reverse: 50 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

1N4151
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
amb
amb
94 9151
Figure 1. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 9152
1000
Figure 2. Forward Current vs. Forward Voltage
0.01
100
100
0.1
0.1
10
10
Parameter
1
1
0
0
Scattering Limit
T = 100 °C
0.4
T
40
j
j
V - Forward Voltage (V)
- Junction Temperature (°C)
F
0.8
80
T = 25 °C
j
I
V
V
I
V
I
I
i
R
F
R
F
F
120
1.2
R
R
R
= 50 mA
= I
= 10 mA, V
= 0.1 x I
= 5 µA
= 50 V
= 50 V, T
= 0, f = 1 MHz, V
R
V
R
= 10 mA, i
160
1.6
= 50 V
Test condition
R
, R
j
= 150 °C
R
L
200
2.0
= 6 V,
= 100 Ω
R
= 1 mA
HF
= 50 mV
Symbol
V
C
V
(BR)
I
I
t
t
R
R
rr
rr
F
D
Figure 3. Diode Capacitance vs. Reverse Voltage
94 9153
3.0
2.5
2.0
1.5
1.0
0.5
0
Min
75
0.1
V
R
- Reverse Voltage (V)
1
Typ.
880
14
T
f = 1 MHz
j
= 25 °C
10
1000
Max
50
50
2
4
2
100
Unit
mV
nA
µA
pF
ns
ns
V