NTE248 NTE Electronics, Inc., NTE248 Datasheet
NTE248
Manufacturer Part Number
NTE248
Description
Transistor; PNP; 100 V; 100 V; 5 V; 12 A (Continuous), 120 A (Peak); 200 mA
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Powerr
Datasheet
1.NTE247.pdf
(2 pages)
Specifications of NTE248
Current, Base
200 mA
Current, Collector
12 A (Continuous), 120 A (Peak)
Current, Collector Cutoff
1 mA (Max.) @ VCE ≥ 50 V, IE ≥ 0
Current, Gain
100
Current, Input
200 mA
Current, Output
12 A
Gain, Dc Current, Maximum
18000 @ VCE ≥ 3 V, IC ≥ 6 A
Gain, Dc Current, Minimum
750 @ VCE ≥ 3 V, IC ≥ 6 A
Package Type
TO-3
Polarity
PNP
Power Dissipation
150 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1.17 °C⁄W
Transistor Polarity
PNP
Transistor Type
PNP
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Emitter To Base
5 V
Voltage, Input
5 V
Voltage, Output
100 V
Voltage, Saturation, Collector To Emitter
2 V @ IC ≥ 6 A, IB ≥ 24 mA
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain: h
D Collector–Emitter Sustaining Voltage: V
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector Cutoff Current
Emitter Cutoff Current
Continuous
Peak
Derate Above 25 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE247 (NPN) & NTE248 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
C
= 3500 Typ @ I
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
CEO(sus)
I
I
I
CEO
EBO
CEX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
I
V
V
V
V
C
J
thJC
CE
CE
CE
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100mA, I
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100V, V
= 5V, I
= 50V, I
= 100V, V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5A
C
Test Conditions
E
= 100V Min @ 100mA
= 0
B
BE(off)
= 0
BE(off)
= 0, Note 1
= 1.5V, T
= 1.5V
A
= +150 C
Min
100
–
–
–
–
Typ
–65 to +200 C
–65 to +200 C
–
–
–
–
–
0.857W/ C
Max Unit
1.0
0.5
5.0
2.0
1.17 C/W
–
200mA
150W
100V
100V
120A
mA
mA
mA
mA
12A
V
5V
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NTE248 Summary of contents
Page 1
... NTE247 (NPN) & NTE248 (PNP) Silicon Complementary Transistors Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain Collector–Emitter Sustaining Voltage Monolithic Construction with Built– ...
Page 2
... Base–Emitter ON Voltage Dynamic Characteristics Small–Signal Current Gain Magnitude of Common Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio Output Capacitance NTE247 NTE248 Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% NTE247 B NTE248 B = +25 C unless otherwise specified) A Symbol Test Conditions 3V ...