NTE2383 NTE Electronics, Inc., NTE2383 Datasheet - Page 2

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NTE2383

Manufacturer Part Number
NTE2383
Description
MOSFET, Power; P-Ch; VDSS 100V; RDS(ON) 0.3Ohm; ID 10.5A; TO-220; PD 75W; VGS +/-20V
Manufacturer
NTE Electronics, Inc.
Datasheet

Specifications of NTE2383

Current, Drain
10.5 A
Gate Charge, Total
58 nC
Package Type
TO-220
Polarization
P-Channel
Power Dissipation
75 W
Resistance, Drain To Source On
0.3 Ohm
Resistance, Thermal, Junction To Case
2.5 °C⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
140 ns
Time, Turn-on Delay
60 ns
Transconductance, Forward
2 mhos
Transistor Type
N Channel Enhancement Mode
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
6.3 V
Voltage, Gate To Source
±20 V
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current, Forward
Gate–Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain–Source On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
(Body Diode)
Parameter
C
= +25 C unless otherwise specified)
V
Symbol
V
r
300 s, Duty Cycle
(BR)DSS
DS(on)
t
t
I
I
I
C
C
V
C
Q
GS(th)
g
d(on)
Q
GSS
GSS
d(off)
I
DSS
Q
SM
I
t
FS
oss
t
t
SD
rss
iss
S
rr
gd
r
f
gs
g
V
V
V
V
V
V
V
V
V
V
MOSFET switching times are
essentially independent of operating
essentially independent of operating
temperature
V
Gate charge is essentially
independent of operating
independent of operating
temperature
Note 3
T
Note 2
T
dI
J
J
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
GS
F
= +25 C, I
= +25 C, I
/dt = 100A/ s
= 100V, V
= 80V, V
= V
= 25V, V
= 0, I
= 20V
= 20V
= 10V, I
= 50V, I
= 10V, V
50V, I
GS
Test Conditions
D
, I
= 0.25mA
D
D
D
D
GS
GS
S
F
DS
= 5.3A, Note 2
= 5.3A, Note 2
= 10.5A, Z
GS
= 0.25mA
= 10.5A,
= 10.5A, V
2%.
= 0, T
= 0, f = 1MHz
= 80V, I
= 0
J
= +125 C
D
O
GS
= 10.5A,
= 24 ,
= 0V,
Min
100
2.0
2.0
12.6
16.6
Typ
835
357
94
–100
Max
0.25
10.5
100
140
140
140
300
1.0
4.0
0.3
6.3
60
58
42
mhos
Unit
mA
mA
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
A
A
V

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