DS26C31TMX/NOPB National Semiconductor, DS26C31TMX/NOPB Datasheet - Page 2

• Manufacturer Part Number: DS26C31TMX/NOPB
• Description: IC LINE DRIVER QUAD CMOS 16-SOIC
• Manufacturer: National Semiconductor
• Type: Driverr

Specifications of DS26C31TMX/NOPB

• Number Of Drivers/receivers: 4/0
• Protocol: RS422
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Interface Circuit Standard 1: EIA-422/RS-422
• Number Of Receivers: Not Required
• Number Of Transmitters: 4
• Number Of Transceivers: Not Required
• Data Transmission Topology: Multidrop
• Receiver Signal Type: Not Required
• Transmitter Signal Type: Differential
• Single Supply Voltage (typ): 5V
• Single Supply Voltage (min): 4.5V
• Single Supply Voltage (max): 5.5V
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Power Supply Requirement: Single
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 16
• Package Type: SOIC N
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Peak Reflow Compatible (260 C): Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DS26C31TMX; DS26C31TMXTR

www.national.com
V
V
V
V
V
|V
V
|V
I
I
I
I
I
IN
CC
OZ
SC
OFF
IH
IL
OH
OL
T
OS
Absolute Maximum Ratings
2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
DC Electrical Characteristics
V
T
OS
Supply Voltage (V
DC Input Voltage (V
DC Output Voltage (V
Clamp Diode Current (I
DC Output Current, per pin (I
DC V
Storage Temperature Range (T
Max. Power Dissipation (P
| − |V
CC
Symbol
per pin (I
Ceramic “J” Pkg.
Plastic “N” Pkg.
− V
= 5V
CC
T
OS
|
or GND Current,
|
±
CC
10% (unless otherwise specified) (Note 4)
)
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output
Voltage
Differential Output
Voltage
Difference In
Differential Output
Common Mode
Output Voltage
Difference In
Common Mode Output
Input Current
Quiescent Supply
Current (Note 6)
TRI-STATE Output
Leakage Current
Output Short
Circuit Current
Output Leakage Current
Power Off (Note 5)
CC
IN
)
)
OUT
IK
Parameter
, I
)
D
OK
)
OUT
@
)
25˚C (Note 3)
STG
)
)
−65˚C to +150˚C
−0.5V to 7.0V
−1.5V to V
−0.5V to 7V
(Notes 1,
V
I
V
I
R
(Note 5)
R
(Note 5)
R
(Note 5)
R
(Note 5)
V
DS26C31T
I
DS26C31M
I
V
ENABLE = V
ENABLE = V
V
(Notes 5, 7)
DS26C31T
V
DS26C31M
V
2419 mW
1736 mW
OUT
OUT
OUT
OUT
±
±
IN
IN
IN
OUT
IN
CC
CC
L
L
L
L
±
150 mA
150 mA
= 100Ω
= 100Ω
= 100Ω
= 100Ω
20 mA
= V
= V
= V
= V
+1.5V
= 0V
= 0V
= −20 mA
= 20 mA
= 0 µA
= 0 µA
= V
IH
IH
CC
CC
CC
CC
or V
or V
, GND, V
or GND
or GND
IL
IH
IL
IL
2
Conditions
,
,
V
V
(Note 6)
V
V
(Note 6)
V
V
V
V
(Note 8)
Operating Conditions
IN
IN
IN
IN
OUT
OUT
OUT
OUT
IH
Lead Temperature (T
This device does not meet 2000V ESD Rating. (Note 13)
Supply Voltage (V
DC Input or Output Voltage
Operating Temperature Range (T
Input Rise or Fall Times (t
, or V
= V
= 2.4V or 0.5V
= V
= 2.4V or 0.5V
SOIC “M” Pkg.
Ceramic “W” Pkg.
Ceramic “E” Pkg.
(Soldering, 4 sec.)
(V
DS26C31T
DS26C31M
= 6V
= −0.25V
= 6V
= 0V
IN
CC
CC
, V
IL
or GND
or GND
OUT
)
CC
)
L
)
Min
−30
2.0
2.5
2.0
r
, t
f
)
±
A
Typ
200
200
3.4
0.3
3.1
1.8
0.8
0.8
)
0.5
4.50 5.50
Min Max Units
−40
−55 +125
0
−150
−100
−100
±
±
Max
500
500
100
100
0.8
0.5
0.4
3.0
0.4
2.0
2.1
1.0
5.0
V
+85
500
CC
1226 mW
2134 mW
1182 mW
260˚C
˚C
˚C
ns
Units
V
V
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V