IL410 Vishay / Small Signal & Opto Products (SSP), IL410 Datasheet - Page 4

• Manufacturer Part Number: IL410
• Description: Optoisolator; Analog; 6-Pin DIP; TRIAC; 1.16 V; 60mA; 500 mW; 6 V
• Manufacturer: Vishay / Small Signal & Opto Products (SSP)
• Type: Analogr

Specifications of IL410

• Capacitance: 25 pF
• Current, Forward: 60 mA
• Input Type: LED
• Output Type: Triac
• Package Type: 6-Pin DIP
• Power Dissipation: 500 mW
• Special Features: Zero Crossing
• Temperature, Operating, Maximum: 150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off: 50 μs
• Time, Turn-on: 35 μs
• Voltage, Forward: 1.16 V (Typ.)
• Voltage, Reverse: 6 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

IL410/ IL4108
Vishay Semiconductors
Coupler
Power Factor Considerations
A snubber isn’t needed to eliminate false operation of
the TRIAC driver because of the IL410/ IL4108’s high
static and commutating dV/dt with loads between 1.0
and 0.8 power factors. When inductive loads with
power factors less than 0.8 are being driven, include
a RC snubber or a single capacitor directly across the
device to damp the peak commutating dV/dt spike.
Normally a commutating dV/dt causes a turning-off
device to stay on due to the stored energy remaining
in the turning-off device.
But in the case of a zero voltage crossing optotriac,
the commutating dV/dt spikes can inhibit one half of
the TRIAC from turning on. If the spike potential
exceeds the inhibit voltage of the zero cross detection
circuit, half of the TRIAC will be held-off and not turn-
on. This hold-off condition can be eliminated by using
a snubber or capacitor placed directly across the
optotriac as shown in Figure 1. Note that the value of
the capacitor increases as a function of the load cur-
rent.
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4
Critical rate of rise of off-state
voltage
Critical rate of rise of voltage at
current commutation
Critical rate of rise of on-state
Thermal resistance, junction to
ambient
Critical rate of rise of coupled
input/output voltage
Common mode coupling
capacitance
Capacitance (input-output)
Isolation resistance
Parameter
Parameter
V
V
V
dI/dt
V
dI/dt
I
f = 1.0 MHz, V
V
V
T
D
D
D
D
IO
IO
= 0 A, V
= 0.67 V
= 0.67 V
= 0.67 V
= 0.67 V
= 500 V, T
= 500 V, T
crq
crq
Test condition
Test condition
15 A/ms, T
15 A/ms, T
RM
DRM
DRM
DRM
DRM
= V
amb
amb
IO
, T
, T
,
,
= 0 V
DM
= 25 °C
= 100 °C
J
J
= 25 °C
= 80 °C
J
J
= V
= 25 °C
= 80 °C
D(RMS)
Symbol
Part
iil410_01
dV
C
C
R
R
IO
CM
.001
IO
IO
IO
.01
/dt
.1
1
0
Figure 1. Shunt Capacitance vs. Load Current
dV/dt
dV/dt
Symbol
50
dV/dt
dV/dt
dI/dt
R
Cs(µF) = 0.0032 (µF)* 10^(0.0066IL (mA)
thja
Min
100
crq
crq
cr
IL - Load Current - mA(RMS)
cr
cr
150
Ta = 25°C, PF = 0.3
IF = 2.0 mA
10000
10000
5000
5000
Min
8.0
200
10000
0.01
Typ.
0.8
10
10
250
12
11
Typ.
150
300
Document Number 83627
350
Max
Rev. 1.4, 26-Apr-04
Max
400
V/ s
Unit
pF
pF
°C/W
V/ s
V/ s
V/ s
V/ s
A/ s
Unit