NTE129P NTE Electronics, Inc., NTE129P Datasheet
NTE129P
Manufacturer Part Number
NTE129P
Description
Transistor; TO237; PNP; 80; 100 V; 5 V; 1 A; 0.85 W; -55 to 150 degC; 147 degC
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Powerr
Datasheet
1.NTE129P.pdf
(2 pages)
Specifications of NTE129P
Current, Collector
1 A
Current, Collector Cutoff
100 nA (Max.) @ 80 V
Current, Continuous Collector
1 A
Current, Gain
100
Device Dissipation
0.85 W
Frequency
50 MHz
Gain, Dc Current, Maximum
300 @ 350 mA, 2 V
Gain, Dc Current, Minimum
100 @ 350 mA, 2 V
Package Type
TO-237
Polarity
PNP
Power Dissipation
0.85 W
Primary Type
Si
Resistance, Thermal, Junction To Case
62.5 °C/W
Temperature Range, Junction, Operating
-55 to 150 °C
Thermal Resistance, Junction To Ambient
147 °C⁄W
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.35 V
Voltage, Emitter To Base
5 V
Description:
The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use
in general purpose power amplifier and switching applications.
Features:
D High V
D Exceptional Power Dissipation Capability
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current , I
Power Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Collector–Emitter Breakdown Voltage BV
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage V
Current Gain Bandwidth Product
Output Capacitance
T
T
A
C
= +25 C
= +25 C
CE
Parameter
Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TOT
Silicon Complementary Transistors
EBO
NTE128P (NPN) & NTE129P (PNP)
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
General Purpose Amp
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
I
CE(sat)
I
h
C
CBO
EBO
f
FE
CEO
T
ob
J
thJC
I
V
V
I
I
I
I
V
C
C
C
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CB
EB
CB
thJA
= 10mA, I
= 10mA, V
= 350mA, V
= 350mA
= 50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 80V
= 4V
= 10V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
B
E
CE
= 0
= 0, f = 1MHz
CE
= 2V
= 2V
Min
100
100
80
50
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–55 to +150 C
–55 to +150 C
Max Unit
0.35
100
100
300
15
–
–
–
62.5 C/W
147 C/W
0.850W
100V
nA
nA
pF
V
V
80V
2W
5V
1A
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NTE129P Summary of contents
Page 1
... NTE128P (NPN) & NTE129P (PNP) Silicon Complementary Transistors Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: D High V Ratings CE D Exceptional Power Dissipation Capability Absolute Maximum Ratings: (T Collector–Base Voltage, V CBO Collector– ...
Page 2
.018 (0.46) 3.050 (1.27) .050 (1.27) .200 (5.08) .180 (4.57) .180 (4.57) .594 (15.09) .015 (0.38) .050 (1.27) .140 (3.55) .090 (2.28) R ...