NTE238 NTE Electronics, Inc., NTE238 Datasheet
NTE238
Manufacturer Part Number
NTE238
Description
Transistor; TO-3; NPN; 1500; 5 V; 8 A; 100 W; -65 to 150 degC; 1.25 degC/W; 0.
Manufacturer
NTE Electronics, Inc.
Type
Horizontal Outputr
Datasheet
1.NTE238.pdf
(2 pages)
Specifications of NTE238
Current, Collector
8 A
Current, Collector Cutoff
0.25 mA
Current, Continuous Collector
8 A
Current, Emitter
12 A
Device Dissipation
100 W
Package Type
TO-3
Polarity
NPN
Power Dissipation
100 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1.25 °C/W
Temperature Range, Junction, Operating
-65 to +150 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
1500 V
Voltage, Collector To Emitter
1500 V
Voltage, Collector To Emitter, Saturation
5 V
Voltage, Emitter To Base
5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use
in deflection circuits.
Features:
D V
D Safe Operating Area @ 50 s = 20A, 400V
Absolute Maximum Ratings;
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current–Continuous, I
Base Current–Continuous, I
Emitter Current–Continuous, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Maximum Lead Temperature (Soldering Purposes, 1/8” from case for 5sec), T
Electrical Characteristics: (T
Note 1. Pulse test: Pulse Width
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
Collector–Emitter Saturation Voltage
Base Emitter Saturation Voltage
SWITCHING CHARACTERISTICS
Fall Time
CEX
Derate above 25 C
= 1500V
Parameter
EB
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
= +25 C), P
CEX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Color TV, Horizontal Output
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
=+25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle = 2%.
V
Symbol
V
V
CEO(sus)
D
I
CE(sat)
BE(sat)
I
CES
EBO
t
J
thJC
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE238
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
I
I
C
C
I
C
C
CE
BE
= 5A, I
= 5A, I
= 5A, I
= 50mA, I
= 5V, I
= 1500V, V
Test Conditions
B
B
B1
C
= 1A
= 1A
= 1A, L
= 0
B
= 0
BE
= 0
B
= 8 H
Min
750
–
–
–
–
–
L
. . . . . . . . .
Typ
0.4
–
–
–
–
–
–65 to +150 C
–65 to +150 C
Max
0.25
0.1
5.0
1.5
1.0
–
1.25 C/W
0.8W/ C
+275 C
1500V
100W
Unit
mA
mA
V
V
V
12A
s
5V
8A
4A
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NTE238 Summary of contents
Page 1
... Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features 1500V CEX D Safe Operating Area @ 20A, 400V Absolute Maximum Ratings; Collector–Emitter Voltage, V Emitter–Base Voltage Collector Current–Continuous, I Base Current–Continuous, I Emitter Current– ...
Page 2
Max .350 (8.89) .312 (7.93) Min E .215 (5.45) .430 (10.92) B .875 (22.2) Dia Max Seating Plane .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .188 (4.8) R Max .525 (13.35) R Max C/Case ...