NTE123AP-10 NTE Electronics, Inc., NTE123AP-10 Datasheet - Page 2

• Manufacturer Part Number: NTE123AP-10
• Description: Transistor; TO92; NPN; 40; 60; 6 V; 600 mA; 1 W @ 25 degC; -55 to 150 degC; 357
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE123AP-10

• Current, Collector Cutoff: 0.1 uA
• Current, Continuous Collector: 600 mA
• Device Dissipation: 1 W @ 25°C
• Gain, Dc Current, Maximum: 300
• Gain, Dc Current, Minimum: 20 mA
• Package Type: TO92
• Resistance, Thermal, Junction To Case: 125 °C⁄W
• Temperature Range, Junction, Operating: -55 to 150 °C
• Thermal Resistance, Junction To Ambient: 357 °C⁄W
• Transistor Polarity: NPN
• Voltage, Breakdown, Collector To Base: 60 V
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Breakdown, Emitter To Base: 6 VDC
• Voltage, Collector To Base: 60
• Voltage, Collector To Emitter: 40 V
• Voltage, Emitter To Base: 6 V

Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width
ON Characteristics (Note 1) (Cont’d)
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
Current Gain–Bandwidth Product
Collector–Base Capacitance
Emitter–Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small–Signal Current Gain
Output Admittance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
Symbol
V
V
300 s, Duty Cycle
CE(sat)
BE(sat)
C
C
h
h
h
h
f
t
t
t
t
oe
T
cb
eb
re
fe
d
s
ie
r
f
A
= +25 C unless otherwise specified)
I
I
I
I
I
V
V
I
I
I
I
V
I
V
I
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CC
CC
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 20mA, V
= 1mA, V
= 1mA, V
= 1mA, V
= 1mA, V
= 150mA, I
= I
= 5V, I
= 0.5V, I
= 30V, V
= 30V, I
B2
= 15mA
Test Conditions
E
CE
CE
CE
CE
C
= 0, f = 100kHz
C
CE
EB(off)
B
B
B
B
B1
= 150mA,
= 0, f = 100kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 15mA
= 50mA
= 15mA
= 50mA
2%.
= 10V, f = 100MHz
= 15mA
= 2V,
0.75
Min
250
1.0
0.1
1.0
40
–
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
0.75
0.95
500
225
0.4
1.2
6.5
8.0
30
15
30
15
20
30
–
x 10
MHz
Unit
mhos
pF
pF
k
ns
ns
ns
ns
V
V
V
V
–6