DS2431P+ Dallas Semiconductor, DS2431P+ Datasheet

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DS2431P+

Manufacturer Part Number
DS2431P+
Description
1-W EEPROM 1KB, TSOC
Manufacturer
Dallas Semiconductor
Datasheet

Specifications of DS2431P+

Capacitance, Input
1000 pF
Data Retention
40 yrs.
Density
1024
Interface
1-Wire
Memory Type
EEPROM
Organization
1K×1
Package Type
TSOC
Temperature, Operating
-40 to +85 °C
Voltage, Esd
8 kV (Contact), 15 kV (Air)
Voltage, Input, Low
0.5 V
Voltage, Output, Low
0.4 V
Voltage, Supply
-0.5 to +6 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS2431P+DS2431P TR
Manufacturer:
MAXIM/美信
Quantity:
20 000
The DS2431 is a 1024-bit, 1-Wire
nized as four memory pages of 256 bits each. Data is
written to an 8-byte scratchpad, verified, and then
copied to the EEPROM memory. As a special feature, the
four memory pages can individually be write protected or
put in EPROM-emulation mode, where bits can only be
changed from a 1 to a 0 state. The DS2431 communi-
cates over the single-conductor 1-Wire bus. The commu-
nication follows the standard 1-Wire protocol. Each
device has its own unalterable and unique 64-bit ROM
registration number that is factory lasered into the chip.
The registration number is used to address the device in
a multidrop, 1-Wire net environment.
Rev 6; 8/08
1-Wire is a registered trademark of Maxim Integrated Products, Inc.
Accessory/PCB Identification
Medical Sensor Calibration Data Storage
Analog Sensor Calibration Including IEEE
P1451.4 Smart Sensors
Ink and Toner Print Cartridge Identification
After-Market Management of Consumables
V
CC
μC
Typical Operating Circuit
________________________________________________________________ Maxim Integrated Products
General Description
R
PUP
®
EEPROM chip orga-
IO
Applications
DS2431
GND
1024-Bit, 1-Wire EEPROM
♦ 1024 Bits of EEPROM Memory Partitioned Into
♦ Individual Memory Pages Can Be Permanently
♦ Switchpoint Hysteresis and Filtering to Optimize
♦ IEC 1000-4-2 Level 4 ESD Protection (8kV Contact,
♦ Reads and Writes Over a Wide Voltage Range
♦ Communicates to Host with a Single Digital
♦ Also Available as Automotive Version Meeting
Note: The leads of TO-92 packages on tape and reel are
formed to approximately 100-mil (2.54mm) spacing. For
details, refer to the package outline drawing.
+ Denotes a lead-free/RoHS-compliant package.
T&R = Tape and reel.
* EP = Exposed pad.
** Contact factory for availability and guidelines on qualified
usage conditions of the lead-free UCSPR.
Pin Configurations appear at end of data sheet.
DS2431+
DS2431+T&R
DS2431P+
DS2431P+T&R
DS2431G+
DS2431G+T&R
DS2431Q+T&R
DS2431X+S
DS2431X+
Four Pages of 256 Bits
Write Protected or Put in EPROM-Emulation Mode
(“Write to 0”)
Performance in the Presence of Noise
15kV Air, Typical)
from 2.8V to 5.25V from -40°C to +85°C
Signal at 15.4kbps or 125kbps Using 1-Wire
Protocol
AEC-Q100 Grade 1 Qualification Requirements
(DS2431-A1)
PART
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
TEMP RANGE
Ordering Information
PIN-PACKAGE
3 TO-92
3 TO-92
6 TSOC
6 TSOC
2 SFN
2 SFN
6 TDFN-EP* (2.5k pcs)
3x3 UCSPR** (2.5k pcs)
3x3 UCSPR** (10k pcs)
Features
1

Related parts for DS2431P+

DS2431P+ Summary of contents

Page 1

... Signal at 15.4kbps or 125kbps Using 1-Wire Applications Protocol ♦ Also Available as Automotive Version Meeting AEC-Q100 Grade 1 Qualification Requirements (DS2431-A1) PART DS2431+ DS2431+T&R DS2431P+ DS2431P+T&R DS2431G+ DS2431G+T&R DS2431Q+T&R DS2431X+S IO DS2431X+ DS2431 Note: The leads of TO-92 packages on tape and reel are formed to approximately 100-mil (2.54mm) spacing. For details, refer to the package outline drawing ...

Page 2

EEPROM ABSOLUTE MAXIMUM RATINGS IO Voltage Range to GND .......................................-0.5V to +6V IO Sink Current ...................................................................20mA Operating Temperature Range ...........................-40°C to +85°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These ...

Page 3

ELECTRICAL CHARACTERISTICS (continued -40°C to +85°C.) (Note 1) A PARAMETER SYMBOL IO PIN: 1-Wire WRITE Write-Zero Low Time (Notes 2, 16, 17) Write-One Low Time (Notes 2, 17) IO PIN: 1-Wire READ Read Low Time (Notes 2, 18) ...

Page 4

EEPROM Note 19: Current drawn from IO during the EEPROM programming interval. The pullup circuit on IO during the programming interval should be such that the voltage greater than or equal to V impedance bypass ...

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