SUP60N06-18-E3 Siliconix / Vishay, SUP60N06-18-E3 Datasheet - Page 5

• Manufacturer Part Number: SUP60N06-18-E3
• Description: MOSFET; TO220 NCH MOS 60V .018R
• Manufacturer: Siliconix / Vishay

Specifications of SUP60N06-18-E3

• Channel Type: N
• Current, Drain: 60 A
• Fall Time: 30 ns
• Gate Charge, Total: 60 nC
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 120 W
• Resistance, Drain To Source On: 0.018 Ohm
• Resistance, Thermal, Junction To Case: 1.25 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 40 °C/W
• Time, Rise: 30 ns
• Time, Turn-off Delay: 50 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 49 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Diode Forward: 1.6 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

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Document Number: 91000
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Revision: 18-Jul-08
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