NTE5620 NTE Electronics, Inc., NTE5620 Datasheet - Page 2

• Manufacturer Part Number: NTE5620
• Description: TRIAC, Power MOSFET; TO-220; 800 V; N; 8 A; 50 mA (Max.); 16 W; 2.2 degC/W
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE5620

• Channel Type: N
• Current, Gate Trigger: 50 mA (Max.)
• Current, On-state, Rms, Maximum: 8 A
• Package Type: TO-220
• Power Dissipation: 16 W
• Resistance, Thermal, Junction To Case: 2.2 °C⁄W
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -40 °C
• Thermal Resistance, Junction To Ambient: 60 °C⁄W
• Voltage, Reverse, Peak, Maximum: 800 V

Electrical Characteristics: (T
Peak Blocking Current (Either Direction)
Peak On–State Voltage (Either Direction)
Peak Gate Trigger Current
Peak Gate Trigger Voltage
Holding Current (Either Direction)
Critical Rate of Rise of Off–State Voltage
Critical Rate of Rise of Commutation Voltage
(Rated V
(I
Duty Cycle < 2%)
(Main Terminal Voltage = 12Vdc, R
(Main Terminal Voltage = 12Vdc, R
(Main Terminal Voltage = Rated V
T
(Main Terminal Voltage = 24Vdc, Gate Open
I
(Rated V
Gate Open)
(Rated V
Gate Unenergized, T
T
TM
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
J
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
= 200mA)
= +125 C)
= 11.3A Peak; Pulse Width = 1 to 2ms,
DRM
DRM
DRM
, I
, T
, Exponential Waveform, T
T(RMS)
J
= +125 C, Gate Open)
Characteristics
C
= 6A, Commutating di/dt = 4.3A/ms,
= +80 C)
C
= +25 C unless otherwise specified)
DRM
L
L
= 100 Ohms)
= 100 Ohms)
, R
J
L
= +125 C,
= 10k ,
Symbol
dv/dt(c)
dv/dt
I
V
V
DRM
I
GT
I
TM
GT
H
Min
0.2
0.2
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
100
1.7
0.9
0.9
1.1
1.4
–
–
–
–
–
–
–
–
5
Max
2.0
2.0
2.0
2.0
2.5
50
50
50
75
50
2
–
–
–
–
V/ s
V/ s
Unit
mA
mA
mA
V
V