IRF710PBF Vishay PCS, IRF710PBF Datasheet

no-image

IRF710PBF

Manufacturer Part Number
IRF710PBF
Description
400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE
Manufacturer
Vishay PCS
Datasheet

Specifications of IRF710PBF

Current, Drain
2 A
Fall Time
11 ns
Gate Charge, Total
17 nC
Operating And Storage Temperature
–55 to +150 °C
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
36 W
Resistance, Drain To Source On
3.6 Ohm
Resistance, Thermal, Junction To Case
3.5 °C/W
Time, Rise
8 ns
Time, Turn-off Delay
21 ns
Time, Turn-on Delay
8 ns
Transconductance, Forward
4.5 S
Voltage, Breakdown, Drain To Source
400 V
Voltage, Drain To Source
400 V
Voltage, Forward, Diode
1.6 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF710PBF
Manufacturer:
IR
Quantity:
18 400
Company:
Part Number:
IRF710PBF
Quantity:
3 600
Company:
Part Number:
IRF710PBF
Quantity:
10 420
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91041
S-Pending-Rev. A, 30-May-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 2.0 A, dI/dt ≤ 40 A/µs, V
= 50 V, starting T
(Ω)
TO-220
a
J
G
= 25 °C, L = 52 mH, R
D
S
c
a
a
DD
b
V
≤ V
GS
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
400
3.4
8.5
17
G
= 25 Ω, I
D
S
WORK-IN-PROGRESS
C
Power MOSFET
= 25 °C, unless otherwise noted
V
3.6
GS
AS
6-32 or M3 screw
at 10 V
= 2.0 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRF710PbF
SiHF710-E3
IRF710
SiHF710
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
design,
- 55 to + 150
IRF710, SiHF710
LIMIT
300
± 20
0.29
400
120
2.0
1.2
6.0
2.0
3.6
4.0
1.1
36
10
low
d
Vishay Siliconix
on-resistance
www.vishay.com
RoHS*
lbf · in
COMPLIANT
UNIT
W/°C
N · m
V/ns
mJ
mJ
°C
W
V
A
A
Available
and
1

Related parts for IRF710PBF

IRF710PBF Summary of contents

Page 1

... The TO-220 package is universally preferred for all S commercial-industrial applications at power dissipation N-Channel MOSFET levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220 IRF710PbF SiHF710-E3 IRF710 SiHF710 = 25 °C, unless otherwise noted °C ...

Page 2

IRF710, SiHF710 Vishay Siliconix THERMAL RESISTANCE PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91041 S-Pending-Rev. A, 30-May- °C Fig Typical Transfer Characteristics C Fig ...

Page 4

IRF710, SiHF710 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: ...

Page 5

Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U 0.01 Ω ...

Page 6

IRF710, SiHF710 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 ...

Page 7

D.U Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data ...

Page 8

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

Related keywords