SI4848DY-T1-E3 Siliconix / Vishay, SI4848DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4848DY-T1-E3
• Description: MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.068Ohm; ID 2.7A; SO-8; PD 1.5W; VGS +/-20V
• Manufacturer: Siliconix / Vishay

Specifications of SI4848DY-T1-E3

• Channel Type: N
• Current, Drain: 3.70 A
• Gate Charge, Total: 17 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 1.5 W
• Resistance, Drain To Source On: 0.085 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 24 ns
• Time, Turn-on Delay: 9 ns
• Transconductance, Forward: 15 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 0.75 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Si4848DY
Vishay Siliconix
Notes
a.
b.
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
25
20
15
10
b
5
0
0
Parameter
a
a
2
V
DS
a
Output Characteristics
V
- Drain-to-Source Voltage (V)
GS
a
a
J
= 10 thru 6 V
4
= 25_C UNLESS OTHERWISE NOTED)
6
Symbol
V
r
r
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
)
8
3, 4 V
5 V
10
V
V
I
D
DS
DS
^ 3.5 A, V
I
= 120 V, V
= 75 V, V
F
V
V
V
V
V
V
V
V
DS
= 2.5 A, di/dt = 100 A/ms
I
DS
DS
DS
GS
V
Test Condition
GS
S
DD
DD
DS
= 2.5 A, V
= 0 V, V
= V
= 120 V, V
w 5 V, V
= 6.0 V, I
= 10 V, I
= 75 V, R
= 75 V, R
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, I
GS
= 10 V, R
D
= 0 V, T
GS
GS
D
D
= 250 mA
D
L
L
GS
= "20 V
= 3.5 A
= 5 A
= 21 W
= 21 W
= 3.0 A
= 10 V
= 0 V
= 0 V
25
20
15
10
D
J
5
0
G
= 55_C
= 3.5 A
0
= 6 W
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
2
2.0
0.5
25
T
C
3
25_C
= 125_C
0.068
0.076
Typ
0.75
0.85
3.2
6.0
9.0
15
17
10
24
17
45
4
"100
Max
0.085
0.095
1.2
1.8
21
14
15
35
25
70
1
5
5
-55_C
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
6