NTE324 NTE Electronics, Inc., NTE324 Datasheet - Page 2
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NTE324
Manufacturer Part Number
NTE324
Description
Transistor; TO39; NPN; 120 V; 120 V; 4 V; 1 A; 10 W; 200 degC; 175 degC/W; 5 @
Manufacturer
NTE Electronics, Inc.
Type
Driver, Powerr
Datasheet
1.NTE324.pdf
(2 pages)
Specifications of NTE324
Current, Collector
1 A
Current, Collector Cutoff
1 μA (Max.)
Current, Continuous Collector
1 A
Current, Gain
40 to 150
Device Dissipation
10 W
Frequency
30 MHz
Gain, Dc Current, Maximum
5 @ 1 A
Gain, Dc Current, Minimum
40 @ 250 mA
Package Type
TO-39
Polarity
NPN
Power Dissipation
10 W
Primary Type
Si
Resistance, Thermal, Junction To Case
17.4 °C/W
Temperature Range, Junction, Operating
200 °C
Thermal Resistance, Junction To Ambient
175 °C⁄W
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
120 V
Voltage, Collector To Base
120 V
Voltage, Collector To Emitter
120 V
Voltage, Collector To Emitter, Saturation
2 V
Voltage, Emitter To Base
4 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrical Characteristics (Cont’d): (T
Note 1. Pulse Duration = 300 s, Duty Cycle
Base–Emitter Voltage
DC Current Gain
Transition Frequency
Collector–Base Capacitance
Small–Signal Current Gain
Parameter
Emitter
(12.7)
(6.6)
.260
.500
Max
Min
Symbol
C
V
h
h
f
cbo
BE
FE
T
fe
45
C
V
V
V
V
V
V
CE
CE
CE
CE
CB
CE
= +25 C unless otherwise specified)
.031 (.793)
= 2V, I
= 2V, I
= 2V, I
= 10V, I
= 20V, I
= 1.5V, I
2%.
Test Conditions
C
C
C
C
E
= 250mA
= 250mA, Note 1
= 1A, Note 1
C
= 0, f = 1MHz
= 100mA, f = 10MHz
= 200mA, f = 1kHz
.018 (0.45)
Base
Collector/Case
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Min
40
30
40
–
5
–
Typ Max Unit
–
–
–
–
–
–
150
1.0
50
–
–
–
MHz
pF
V
–
–
–