DS1220AB-200+ Dallas Semiconductor, DS1220AB-200+ Datasheet - Page 6

• Manufacturer Part Number: DS1220AB-200+
• Description: RAM NV 16K-5% VTP 200NS
• Manufacturer: Dallas Semiconductor

Specifications of DS1220AB-200+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 75 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 16K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 2K×8
• Package Type: 720 EMOD
• Temperature, Operating: 0 to +70 °C
• Time, Access: 200 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
9. Each DS1220AB and each DS1220AD has a built-in switch that disconnects the lithium source until
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
11. In a power down condition the voltage on any pin may not exceed the voltage on V
12. t
13. t
14. DS1220 modules are recognized by Underwriters Laboratory (U.L.®) under file E99151.
DC TEST CONDITIONS
Outputs Open
Cycle = 200ns for Operating Current
All Voltages Are Referenced to Ground
ORDERING INFORMATION
DS1220AB-100
DS1220AB-100+
DS1220AB-100IND
DS1220AB-100IND+
DS1220AB-120
DS1220AB-120+
DS1220AB-150
DS1220AB-150+
DS1220AB-200
DS1220AB-200+
DS1220AB-200IND
DS1220AB-200IND+
DS1220AD-100
DS1220AD-100+
DS1220AD-100IND
DS1220AD-100IND+
DS1220AD-120
DS1220AD-120+
DS1220AD-150
DS1220AD-150+
DS1220AD-200
DS1220AD-200+
DS1220AD-200IND
DS1220AD-200IND+
+ Denotes lead-free/RoHS-compliant product.
PART NUMBER
the output buffers remain in a high-impedance state during this period.
V
V
and is not 100% tested.
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
WR1
WR2
CC
CC
starting from the time power is first applied by the user. This parameter is guaranteed by design
is first applied by the user. The expected t
, t
, t
DH1
DH2
are measured from WE going high.
are measured from CE going high.
TEMPERATURE
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
RANGE
TOLERANCE
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
SUPPLY
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
8 of 10
DR
is defined as accumulative time in the absence of
PIN/PACKAGE
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
24 / 720 EMOD
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
GRADE
SPEED
100ns
100ns
100ns
100ns
120ns
120ns
150ns
150ns
200ns
200ns
200ns
200ns
100ns
100ns
100ns
100ns
120ns
120ns
150ns
150ns
200ns
200ns
200ns
200ns
CC
.
DS1220AB/AD