IRF9620PBF Vishay PCS, IRF9620PBF Datasheet - Page 2

• Manufacturer Part Number: IRF9620PBF
• Description: MOSFET, Power; P-Ch; VDSS -200V; RDS(ON) 1.5 Ohms; ID -3.5A; TO-220AB; PD 40W; VGS +/-2
• Manufacturer: Vishay PCS

Specifications of IRF9620PBF

• Current, Drain: -3.5 A
• Gate Charge, Total: 22 nC
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 40 W
• Resistance, Drain To Source On: 1.5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 1 S
• Voltage, Breakdown, Drain To Source: -200 V
• Voltage, Forward, Diode: -7 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

IRF9620, SiHF9620
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
J
GS
GS
DS
T
= 25 °C, I
R
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
G
= - 10 V
= - 10 V
= 25 °C, I
= - 160 V, V
= 50 Ω, R
V
V
V
V
V
DD
DS
f = 1.0 MHz, see fig. 5
DS
TYP.
DS
GS
0.50
TEST CONDITIONS
-
-
= - 100 V, I
= - 50 V, I
F
= V
= - 200 V, V
= 0 V, I
V
V
= - 3.5 A, dI/dt = 100 A/µs
V
GS
DS
S
GS
I
D
GS
D
= - 3.5 A, V
GS
= 67 Ω, see fig. 17
= ± 20 V
= - 25 V,
, I
= - 4.0 A, V
see fig. 11 and 18
= 0 V,
D
D
= 0 V, T
= - 250 µA
D
= - 250 µA
D
I
D
= - 1.5 A
GS
= - 1.5 A,
= - 1.5 A
D
= - 1 mA
= 0 V
GS
J
DS
G
G
= 125 °C
= 0 V
= - 160 V,
b
b
MAX.
D
S
b
D
S
b
3.1
62
b
-
b
- 200
MIN.
- 2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- 0.22
TYP.
350
100
300
4.5
7.5
1.9
30
15
25
20
15
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
- 3.5
- 7.0
S
- 14
450
1.5
2.9
22
12
10
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V