SS34-E3/57T General Semiconductor / Vishay, SS34-E3/57T Datasheet - Page 3

• Manufacturer Part Number: SS34-E3/57T
• Description: Rectifier, Schottky; DO-214AB; 3.0A IF; 0.75V; 40V; 100A IFRM; 10000V/us; 1000pF
• Manufacturer: General Semiconductor / Vishay

Specifications of SS34-E3/57T

• Current, Forward: 3 A
• Current, Reverse: 20 mA
• Current, Surge: 100 A
• Package Type: DO-214AB (SMC)
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +150 °C
• Voltage, Forward: 0.5 V
• Voltage, Reverse: 40 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
Figure 4. Typical Reverse Current Characteristics
0
0
T
Percent of Rated Peak Reverse Voltage (%)
J
0.2
= 150 °C
T
Instantaneous Forward Voltage (V)
A
20
= 125 °C
T
J
0.4
= 125 °C
T
A
= 75 °C
T
0.6
A
40
0.079 (2.06)
T
0.103 (2.62)
= 25 °C
J
0.030 (0.76)
0.126 (3.20)
0.114 (2.90)
0.060 (1.52)
= 25 °C
0.8
60
Pulse Width = 300 µs
1 % Duty Cycle
1.0
SS32 - SS34
SS35 & SS36
1.2
DO-214AB (SMC)
SS32 - SS34
SS35 & SS36
80
0.305 (7.75)
0.260 (6.60)
0.320 (8.13)
0.280 (7.11)
Cathode Band
1.4
100
1.6
0.008 (0.2)
0 (0)
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
0.126 (3.20)
1000
MIN.
100
100
0.1
10
10
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
SS32 - SS34
SS35 & SS36
0.1
0.320 REF.
t - Pulse Duration (s)
Reverse Voltage (V)
0.060 (1.52)
1
MIN.
0.185 (4.69)
1
SS32 thru SS36
MAX.
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
100
100
3