NTE2389 NTE Electronics, Inc., NTE2389 Datasheet
NTE2389
Manufacturer Part Number
NTE2389
Description
MOSFET; N-Ch; VDSS 60V; RDS(ON) 40 Milliohms; ID 35A; TO-220; PD 125W; VGS +/-30V; VF 1.
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2389.pdf
(2 pages)
Specifications of NTE2389
Channel Type
N-Channel
Current, Drain
35 A
Operating And Storage Temperature
-55 to +175 °C
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
40 Milliohms
Resistance, Thermal, Junction To Case
1.2 °C⁄W (Max.)
Temperature, Operating, Maximum
+175 °C
Thermal Resistance, Junction To Ambient
60 °C⁄W
Time, Turn-off Delay
125 ns
Time, Turn-on Delay
25 ns
Transconductance, Forward
13.5 Mhos
Voltage, Breakdown, Drain To Source
60 V
Voltage, Drain To Gate
60 V
Voltage, Forward, Diode
1.4 V
Voltage, Gate To Source
±30 V
Absolute Maximum Ratings: (T
Drain–Source Voltage, V
Drain–Gate Voltage (R
Drain Current, I
Gate–Source Voltage, V
Maximum Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature range, T
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Static Ratings
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Drain–Source On–State Resistance
Dynamic Ratings
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous
Pulsed
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
GS
DS
= 20k ), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
N–Ch, Enhancement Mode
stg
A
D
= +25 C unless otherwise specified)
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
R
V
J
BV
High Speed Switch
= +25 C unless otherwise specified)
I
C
I
DS(on)
C
GS(th)
C
GSS
DSS
g
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
oss
rss
DSS
iss
fs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2389
MOSFET
I
I
V
V
V
I
I
V
D
D
D
D
DS
GS
GS
DS
= 0.25mA, V
= 1mA, V
= 20A, V
= 20A, V
= 60V,
= 25V, V
= 0
= 30V, V
Test Conditions
thJC
thJA
DS
DS
GS
GS
= 25V
DS
GS
= V
= 10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0, f = 1MHz
T
T
= 0
= 0
J
J
GS
= +25 C
= +125 C
Min
2.1
60
–
–
–
–
8
–
–
–
1650 2000
13.5
Typ
560
300
3.0
0.1
10
40
–
1
–55 to +175 C
Max
100
750
400
4.0
1.0
10
45
–
–
1.2 C/W
60 C/W
+175 C
mhos
125W
Unit
152A
m
mA
nA
pF
pF
pF
V
V
60V
60V
35A
30V
A
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NTE2389 Summary of contents
Page 1
... Gate Threshold Voltage Zero Gate Voltage Drain Current Gate–Source Leakage Current Drain–Source On–State Resistance Dynamic Ratings Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance NTE2389 MOSFET N–Ch, Enhancement Mode High Speed Switch = +25 C unless otherwise specified DGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Dynamic Ratings (Cont’d) Turn–On Time Turn–Off Time Internal Drain Inductance Internal Source Inductance Reverse Diode Continuous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On–Voltage Reverse Recovery Time Reverse Recovery Charge .147 (3.75) .070 ...