NTE171 NTE Electronics, Inc., NTE171 Datasheet - Page 2

• Manufacturer Part Number: NTE171
• Description: Transistor; TO-202; NPN; 300 V; 300 V; 5 V; 100 mA; 1.67 W; -55 to 150 degC; 30
• Manufacturer: NTE Electronics, Inc.
• Type: Audio Amplifier, High Voltager

Specifications of NTE171

• Current, Collector: 100 mA
• Current, Collector Cutoff: 10 μA
• Current, Continuous Collector: 100 mA
• Current, Gain: 30 to 150
• Device Dissipation: 1.67 W
• Frequency: 50 MHz
• Gain, Dc Current, Maximum: 90
• Gain, Dc Current, Minimum: 30
• Package Type: TO-202
• Polarity: NPN
• Power Dissipation: 1.67 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 20 °C/W
• Temperature Range, Junction, Operating: -55 to +150 °C
• Thermal Resistance, Junction To Ambient: 75 °C⁄W
• Transistor Polarity: NPN
• Voltage, Breakdown, Collector To Emitter: 300 V
• Voltage, Collector To Base: 300 V
• Voltage, Collector To Emitter: 300 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
OFF Characteristics
Collector−Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Dynamic Characteristics
Current Gain−Bandwidth Product
Collector−Base Capacitance
Parameter
(30.48)
1.200
Ref
.100 (2.54)
(10.16)
(12.7)
(7.62)
.500
.300
.400
Min
A
= +25°C unless otherwise specified)
C
.380 (9.56)
V
Symbol
(BR)CER
I
I
E
h
C
CBO
EBO
f
FE
T
cb
B
I
V
V
I
I
I
I
V
C
C
C
C
C
CB
BE
CB
= 1mA, I
= 4mA, V
= 20mA, V
= 40mA, V
= 20mA, V
C
= 5V, I
= 300V, I
= 20V, I
Test Conditions
(9.52)
C
B
.325
.070 (1.78) x 45°
CE
E
.132 (3.35) Dia
CE
= 0, Note 1
= 0
CE
CE
E
= 0, f = 1MHz
= 10V
= 0
= 10V, f = 20MHz
= 10V
= 10V
.100 (2.54)
.050 (1.27)
.180 (4.57)
Chamf
Min
300
20
30
20
50
−
−
−
Typ
−
−
−
−
−
−
−
−
Max
150
10
10
−
−
−
−
3
MHz
Unit
µA
µA
pF
V