DG413DJ-E3 Siliconix / Vishay, DG413DJ-E3 Datasheet - Page 3

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DG413DJ-E3

Manufacturer Part Number
DG413DJ-E3
Description
Switch; High Speed DG413 IN Plastic DIP-16
Manufacturer
Siliconix / Vishay
Type
4-Channelr
Datasheet

Specifications of DG413DJ-E3

Charge Injection
5 pC
Current, Source, Off-state
0.25 nA
Number Of Channels
4
Package
16-Pin PDIP
Package Type
16-Pin PDIP
Power Consumption
0.350 μW
Primary Type
Analog
Resistance, Drain To Source On
35 Ohms
Switch Type
SPST
Time, Turn-on
175 ns
Voltage, Supply
44
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
Input Current, V
Input Current, V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
Channel-to-Channel
Crosstalk
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
e
e
IN
IN
Low
High
e
e
e
e
a
V
Symbol
ANALOG
r
C
C
C
OIRR
X
I
I
DS(on)
I
I
t
D(off)
D(on)
S(off)
t
GND
OFF
D(off)
D(on)
TALK
S(off)
I
I
ON
t
I+
Q
I
IH
I-
IL
D
L
V
V
I
D
V
V+ = 13.5 V, V- = - 13.5 V
V+ = 16.5 V, V- = - 16.5 V
V+ = 16.5 V, V- = - 16.5 V
S
L
V+ = 16.5, V- = - 16.5 V
R
DG413 Only, V
R
S
=
V+ = 15 V, V- = - 15 V
V
V
= - 10 mA, V
= 5 V, V
R
L
L
V
=
IN
IN
Unless Specified
±
V
L
Test Conditions
= 300 Ω, C
= 300 Ω, C
S
±
g
= 50 Ω, C
15.5 V, V
under test = 0.8 V
under test = 2.4 V
V
= V
= 0 V, R
10 V, See Figure 2
C
IN
f = 1 MHz
f = 1 MHz
L
D
= 0 or 5 V
IN
= 10 nF
=
= 2.4 V, 0.8 V
±
D
S
g
L
L
L
15.5 V
S
= 0 Ω
=
=
= 5 pF,
= 35 pF
= 35 pF
= 10 V
±
±
8.5 V
15.5 V
f
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
- 0.0001
- 0.0001
0.0001
0.0001
0.005
0.005
±
±
±
Typ
110
100
25
25
68
85
35
5
9
9
0.1
0.1
0.1
c
- 0.25
- 0.25
- 55 to 125 °C
Min
- 0.4
- 0.5
- 0.5
- 15
- 20
- 20
- 40
- 1
- 5
- 1
- 5
A Suffix
d
DG411/412/413
Max
0.25
0.25
175
240
145
160
0.4
0.5
0.5
15
35
45
20
20
40
1
5
1
5
Vishay Siliconix
d
- 0.25
- 0.25
Min
- 40 to 85 °C
- 0.4
- 0.5
- 0.5
- 15
- 10
- 5
- 5
- 1
- 5
- 1
- 5
D Suffix
d
www.vishay.com
Max
0.25
0.25
175
220
145
160
0.4
0.5
0.5
15
35
45
10
5
5
1
5
1
5
d
Unit
nA
µA
pC
dB
pF
µA
ns
Ω
V
3

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