DG201BDY-E3 Siliconix / Vishay, DG201BDY-E3 Datasheet - Page 7

• Manufacturer Part Number: DG201BDY-E3
• Description: Switch, Analog; SPST; SOIC; 45 Ohms; 0.01 nA; 0.02 nA; 22 V; 30 mA
• Manufacturer: Siliconix / Vishay
• Type: 4-Channelr

Specifications of DG201BDY-E3

• Charge Injection: 1 pC
• Current, Source, Off-state: 0.50 nA
• Number Of Channels: 4
• Package: 16-Pin SOIC N
• Package Type: 16-Pin SOIC N
• Primary Type: Analog
• Resistance, Drain To Source On: 45 Ohms
• Switch Type: SPST
• Time, Turn-on: 120 ns
• Voltage, Supply: 44
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TEST CIRCUITS
Document Number: 70037
S-71155–Rev. H, 11-Jun-07
V
S
V
= + 2 V
S
V
3 V
g
R
Off Isolation = 20 log
g
= 50 Ω
0 V, 2.4 V
3 V
R
g
S
IN
Figure 3. Off Isolation
GND
C
IN
+ 15 V
S
S
IN
GND
V+
GND
V
V
S
O
- 15 V
+ 15 V
V-
V
V+
+ 15 V
O
V+
D
= V
- 15 V
V-
- 15 V
S
V-
D
D
R
R
1 kΩ
L
L
C
+ r
R
DS(on)
L
Figure 5. Charge Injection
Figure 2. Switching Time
C
1000 pF
L
C
35 pF
V
R
L
O
L
V
V
O
O
X
C = RF bypass
TA LK
V
S
Isolation = 20 log
Output
Switch
Logic
Input
R
g
The charge injection in coulombs is Q = C
ΔV
Figure 4. Channel-to-Channel Crosstalk
= 50 Ω
0 V, 2.4 V
0 V, 2.4 V
O
= measured voltage error due to charge injection
V
3 V
0 V
O
V
IN
NC
O
X
C
V
V
ON
S
O
S
IN
S
IN
1
2
1
2
t
ON
GND
50 %
+ 15 V
DG201B/202B
V+
90 %
ΔV
OFF
Vishay Siliconix
O
- 15 V
V-
t
D
D
L
OFF
1
2
x Δ V
www.vishay.com
ON
C
O
t
t
r
f
< 20 ns
< 20 ns
50 Ω
R
V
L
O
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