NTE491 NTE Electronics, Inc., NTE491 Datasheet
NTE491
Manufacturer Part Number
NTE491
Description
MOSFET; N-Ch; VDSS 60V; RDS(ON) 1.2 Ohms; ID 200mA; TO-92; PD 350mW; VGS +/-20V; -55degc
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE491.pdf
(3 pages)
Specifications of NTE491
Current, Drain
200 mA
Package Type
TO-92
Polarization
N-Channel
Power Dissipation
350 mW
Resistance, Drain To Source On
1.2 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
10 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
320 Micromhos
Voltage, Breakdown, Drain To Source
60 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Features:
D Available in either TO92 (NTE491) or SOT−23 Surface Mount (NTE491SM) Type Package
D High Density Cell Design for Low R
D Voltage Controlled Small Signal Switch
D Rugged and Reliable
D High Saturation Current capability
Absolute Maximum Ratings:
Drain−Source Voltage, V
Drain−Gate Voltage (R
Gate−Source Voltage, V
Drain Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Ambient, R
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), T
Continuous
Non−Repetitive (t
Continuous
Pulsed
Derate above 25°C
NTE491
NTE491SM
NTE491
NTE491SM
NTE491
NTE491SM
NTE491
NTE491SM
NTE491
NTE491SM
D
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GS
GS
p
DS
≤ 50µs)
= 1MΩ), V
A
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= +25°C), P
N−Ch, Enhancement Mode
stg
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High Speed Switch
DGR
DS(ON)
D
NTE491SM
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J
MOSFET
NTE491
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th (JA)
L
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−55° to +150°C
−55° to +150°C
312.5°C/W
2.8mW/°C
1.6mW/°C
625°C/W
350mW
200mW
+300°C
200mA
500mA
800mA
115mA
±20V
±40V
60V
60V
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NTE491 Summary of contents
Page 1
... Features: D Available in either TO92 (NTE491) or SOT−23 Surface Mount (NTE491SM) Type Package D High Density Cell Design for Low R D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Saturation Current capability Absolute Maximum Ratings: Drain−Source Voltage Drain−Gate Voltage (R = 1MΩ), V GS Gate− ...
Page 2
... NTE491 NTE491SM ON Characteristics (Note 1) Gate Threshold Voltage NTE491 NTE491SM Static Drain−Source ON Resistance NTE491 NTE491SM Drain−Source ON−Voltage NTE491 NTE491SM ON−State Drain Current NTE491 NTE491SM Forward Transconductance NTE491 NTE491SM Dynamic Characteristics Input Capacitance Reverse Transfer Capacitance Output Capacitance Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. ...
Page 3
... Turn−On Time NTE491 NTE491SM Turn−Off Time NTE491 NTE491SM Drain−Source Diode Charactweristics and Maximum Ratings (NTE491SM ONLY) Maximum Continuous Drain−Source Diode Forward Current Maximum Pulsed Drain−Source Diode Forward Current Drain−Source Diode Forward Voltage Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. ...