NTE2379 NTE Electronics, Inc., NTE2379 Datasheet

no-image

NTE2379

Manufacturer Part Number
NTE2379
Description
MOSFET; N-Ch; VDSS 600V; RDS(ON) 1.2 Ohms; ID 6.2A; TO-220; PD 125W; VGS +/-20V; Qg 60nC
Manufacturer
NTE Electronics, Inc.
Datasheet

Specifications of NTE2379

Channel Type
N-Channel
Current, Drain
6.2 A
Fall Time
20 ns
Gate Charge, Total
60 nC
Operating And Storage Temperature
-55 to +150 °C
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
1.2 Ohms
Resistance, Thermal, Junction To Case
1 °C⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Rise
18 ns
Time, Turn-off Delay
55 ns
Time, Turn-on Delay
32 ns
Transconductance, Forward
4.7 Mhos
Voltage, Breakdown, Drain To Source
600 V
Voltage, Diode Forward
1.5 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±20 V
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Gate–Source Voltage, V
Drain Current, I
Gate Current (Pulsed), I
Single Pulsed Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), T
Thermal Resistance:
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. V
Note 3. I
Continuous (V
Pulsed (Note 1)
Derate Above 25 C
Maximum Junction–to–Case, R
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
Maximum Junction–to–Ambient (Free Air Operation), R
SD
T
T
DD
C
C
= +25 C
= +100 C
= 50V, starting T
6.2A, di/dt
D
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
GS
= 10V)
N–Channel, Enhancement Mode
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80A/ A, V
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AR
J
stg
= +25 C, l = 27mH, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
DD
thJC
D
AR
J
V
NTE2379
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, T
G
J
= 25 , I
+150 C.
thJA
AS
= 6.2A.
. . . . . . . . . . . . . . . . . . . .
L
. . . . . . . . . . . .
thCS
. . . . . .
–55 to +150 C
–55 to +150 C
1.0W/ C
1.0 C/W
0.5 C/W
62 C/W
+300 C
570mJ
125W
3V/ns
13mJ
6.2A
3.9A
1.5A
6.2A
20V
25A

Related parts for NTE2379

NTE2379 Summary of contents

Page 1

... Note 3. I 6.2A, di/dt 80A NTE2379 MOSFET High Speed Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Electrical Characteristics: (T Parameter Drain–Source Breakdown Voltage Gate Threshold Voltage Gate–Source Leakage Forward Gate–Source Leakage Reverse Drain–Source Leakage Current Static Drain–Source ON Resist- ance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time Turn–Off Delay ...

Page 3

Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .250 (6.35) Max Source Drain/Tab .110 (2.79) .500 (12.7) Max .500 (12.7) Min ...

Related keywords