MCP1703T-3002E/CB Microchip Technology Inc., MCP1703T-3002E/CB Datasheet - Page 3
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MCP1703T-3002E/CB
Manufacturer Part Number
MCP1703T-3002E/CB
Description
Low Iq 250mA LDO, Vin 16V max, Vout =3.0V
Manufacturer
Microchip Technology Inc.
Type
Voltage Regulatorr
Datasheet
1.MCP1703T-3002ECB.pdf
(5 pages)
Specifications of MCP1703T-3002E/CB
Current, Output
250 mA
Current, Supply
2 μA
Package Type
SOT-23A
Power Dissipation
253 mW
Regulation, Line
±0.1 %/V
Regulation, Load
±1 %
Regulator Type
Low Dropout
Resistance, Thermal, Junction To Case
110 °C/W
Temperature, Operating, Range
-40 to +125 °C
Voltage, Dropout
625 mV
Voltage, Input
16 V
Voltage, Noise
8 μV/sqrt Hz
Voltage, Output
3 V
Voltage, Supply, Rejection Ratio
44 dB
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP1703T-3002E/CB
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
MCP1703
DC CHARACTERISTICS (CONTINUED)
TEMPERATURE SPECIFICATIONS
DS22049B-page 4
Electrical Specifications: Unless otherwise specified, all limits are established for V
I
Boldface type applies for junction temperatures, T
Dropout Voltage
Note 1, Note 5
Output Delay Time
Output Noise
Power Supply Ripple
Rejection Ratio
Thermal Shutdown Protection
Note 1:
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistance
Thermal Resistance, 3LD SOT-223
Thermal Resistance, 3LD SOT-23A
Thermal Resistance, 3LD SOT-89
LOAD
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
= 100 µA, C
2:
3:
4:
5:
6:
7:
Parameters
The minimum V
V
The input voltage V
TCV
perature range. V
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
temperature and the thermal resistance from junction to air (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
R
Parameters
is the nominal regulator output voltage. For example: V
OUT
OUT
= (V
= 1 µF (X7R), C
OUT-HIGH
IN
OUT-LOW
must meet two conditions: V
IN
V
= V
Symbol
DROPOUT
- V
T
PSRR
DELAY
T
e
OUT(MAX)
OUT-LOW
SD
IN
N
= lowest voltage measured over the temperature range.
= 1 µF (X7R), T
Sym
) *10
θ
θ
θ
θ
θ
θ
T
T
T
+ V
JA
JC
JA
JC
JA
JC
A
A
A
Min
J
DROPOUT(MAX)
—
—
—
—
—
—
—
—
—
6
OUT(MAX)
(Note 7) of -40°C to +125°C.
/ (V
R
A
Min
-40
-40
-65
—
—
—
—
—
—
* ΔTemperature), V
= +25°C.
IN
1000
Typ
330
525
625
750
150
+ V
44
≥ 2.7V and V
—
8
DROPOUT(MAX)
or Vi
Typ
336
110
62
15
75
10
—
—
—
IN
R
1100
Max
650
725
975
—
—
—
—
= 2.7V (whichever is greater); I
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
IN
+125
+125
+150
Max
≥ (V
OUT-HIGH
—
—
—
—
—
—
A
A
, T
or 2.7V, whichever is greater.
, T
µV/(Hz)
OUT(MAX)
J
J
, θ
Units
, θ
mV
mV
mV
mV
mV
dB
°C
µs
JA
IN
Units
JA
°C/W
°C/W
°C/W
= highest voltage measured over the tem-
). Exceeding the maximum allowable power
°C
°C
°C
= V
). Exceeding the maximum allowable power
1/2
OUT(MAX)
+ V
I
I
I
I
V
Current Parameter
V
I
f = 100 Hz, C
V
V
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
0.300 sq in copper on both sides of
2 sided board, with vias
L
L
L
L
R
L
DROPOUT(MAX)
R
IN
INAC
R
= 250 mA, V
= 250 mA, 3.3V ≤ V
= 250 mA, 2.8V ≤ V
= 250 mA, 2.5V ≤ V
L
= 50 mA, f = 1 kHz, C
= 1.2V
< 2.5V, See Maximum Output
= 0V to 6V, V
= 50Ω resistive
© 2008 Microchip Technology Inc.
= 100 mV pk-pk, C
+ V
OUT
OUT
DROPOUT(MAX)
.
Conditions
OUT
Conditions
R
= 100 µA.
).
= 5.0V
OUT
= 1 µF, I
= 90% V
R
R
R
< 2.8V
OUT
< 5.0V
< 3.3V
, Note 1,
IN
L
= 100 µA,
= 0 µF,
= 1 µF
R
,