DS1245Y-85+ Dallas Semiconductor, DS1245Y-85+ Datasheet - Page 5

• Manufacturer Part Number: DS1245Y-85+
• Description: SRAM, Nonvolatile, 128k x 8, 85 nS, DIP32
• Manufacturer: Dallas Semiconductor

Specifications of DS1245Y-85+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 85 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 1024K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 128K×8
• Package Type: 740 EMOD
• Temperature, Operating: 0 to +70 °C
• Time, Access: 85 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Hazardous Materials

AC ELECTRICAL
CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
Output High Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from
Output Active from
Data Setup Time
Data Hold Time
OE
CE
OE
to Output Valid
to Output Valid
or
CE
to Output Active
WE
WE
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
t
OEW
ACC
WR1
WR2
t
COE
DH1
DH2
WC
AW
OD
OH
WP
RC
OE
CO
DS
(t
A
: See Note 10) (V
DS1245AB-100
MIN
DS1245Y-100
5 of 13
100
100
75
15
40
10
5
5
0
5
5
0
MAX
100
100
50
35
35
(V
DS1245AB-120
MIN
DS1245Y-120
CC
120
120
CC
90
15
50
10
5
5
0
5
5
0
=5V ± 5% for DS1245AB)
=5V ± 10% for DS1245Y)
MAX
120
120
60
35
35
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DS1245Y/AB
12
13
12
13
5
5
3
5
5
4