NTE234 NTE Electronics, Inc., NTE234 Datasheet
NTE234
Manufacturer Part Number
NTE234
Description
Transistor; PNP; Silicon; TO92; 120 V; 120 V; 5 V; 100 mA; 300 mW (Collector)
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, High Voltager
Datasheet
1.NTE234.pdf
(2 pages)
Specifications of NTE234
Complement To
NPN
Current, Collector
100 mA
Current, Collector Cutoff
100 nA
Current, Continuous Collector
100 mA
Current, Emitter
100 mA
Current, Gain
350 to 700
Frequency
100 MHz
Material Type
Silicon
Package Type
TO-92
Polarity
PNP
Power Dissipation
300 mW
Primary Type
Si
Temperature Range, Junction, Operating
-55 to +125 °C
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
120 V
Voltage, Collector To Base
120 V
Voltage, Collector To Emitter
120 V
Voltage, Collector To Emitter, Saturation
0.3 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE2349
Manufacturer:
AVX
Quantity:
23 000
Description:
The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.
Features:
D Low Noise
D High DC Current Gain
D High Breakdown Voltage
D Low Pulse Noise
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Steady State Collector Current, I
Emitter Current, I
Collector Power Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
Breakdown Voltage
DC Current Gain
Collector–to–Emitter
Parameter
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CBO
Low Noise, High Gain Amplifier
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon PNP Transistor
V
Symbol
A
(BR)CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
= +25 C unless otherwise specified)
h
CBO
EBO
FE
J
V
V
I
V
NTE234
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CB
EB
CE
= 1mA, I
= 5V, I
= 120V, I
= 6V, I
Test Conditions
C
C
B
= 0
= 0
= 2mA
E
= 0
Min
120
350
–
–
Typ
–
–
–
–
–55 to +125 C
–55 to +125 C
Max
100
100
700
–
300mW
100mA
100mA
Unit
120V
120V
nA
nA
V
5V
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NTE234 Summary of contents
Page 1
... Low Noise, High Gain Amplifier Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu- ration voltage, tight beta control, and excellent low noise characteristics. ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Saturation Voltage Collector–to–Emitter Base–to–Emitter Voltage Transition Frequency Collector Output Capacitance Noise Figure .105 (2.67) Max .205 (5.2) Max = +25 C unless otherwise specified) A Symbol Test Conditions 10mA 1mA ...