SKM 145 GB 123 D Sindopower / Semikron, SKM 145 GB 123 D Datasheet - Page 4

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SKM 145 GB 123 D

Manufacturer Part Number
SKM 145 GB 123 D
Description
Transistor, IGBT; D-61; IGBT; 1200 V, 145 A; 1200 V; 145 A; 1200 V
Manufacturer
Sindopower / Semikron
Type
Standardr
Datasheet

Specifications of SKM 145 GB 123 D

Capacitance, Gate
6.5 nF
Current, Collector
145 A
Energy Rating
28 mJ
Fall Time
70 ns
Operating And Storage Temperature
–40 to +150 °C
Package Type
D61
Polarity
N-Channel
Primary Type
Si
Resistance, Thermal, Junction To Case
0.15 K/W
Switching Loss
16 mJ
Time, Rise
80 ns
Transistor Type
IGBT
Voltage And Current Rating
1200 V, 145 A
Voltage, Breakdown, Collector To Emitter
1200 V
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
2.5 V
Voltage, Gate Threshold, Range
4.5 V (Min.) to 6.5 V (Max.)
Voltage, Gate To Source
±20 V
Voltage, Saturation, Collector To Emitter
1200 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
SKM 145GB123D
UL Recognized
File no. E 63 532
6
25-04-2007 SEI
© by SEMIKRON

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