NTE2392 NTE Electronics, Inc., NTE2392 Datasheet
NTE2392
Manufacturer Part Number
NTE2392
Description
MOSFET; N-Ch; VDSS 100V; RDS(ON) 0.045Ohm; ID 40A; TO-3; PD 150W; VGS +/-20V; gFS 11Mhos
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2392.pdf
(3 pages)
Specifications of NTE2392
Application
Switching mode power supplies, uninterruptible power supplies and motor speed control
Channel Type
N-Channel
Current, Drain
40 A
Fall Time
100 ns (Max.)
Gate Charge, Total
63 nC
Operating And Storage Temperature
-55 to +150 °C
Package Type
TO-3
Polarization
N-Channel
Power Dissipation
150 W
Resistance, Drain To Source On
0.045 Ohm
Resistance, Thermal, Junction To Case
0.83 °C⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
30 °C⁄W
Time, Rise
100 ns (Max.)
Time, Turn-off Delay
125 ns
Time, Turn-on Delay
35 ns
Transconductance, Forward
11 Mhos
Voltage, Breakdown, Drain To Source
100 V
Voltage, Diode Forward
2.5 V (Max.)
Voltage, Drain To Gate
100 V
Voltage, Forward, Diode
2.5 V
Voltage, Gate To Source
±20 V
Description:
The NTE2392 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D Fast Switching
D Low Drive Current
D Ease of Paralleling
D No Second Breakdown
D Excellent Temperature Stability
Absolute Maximum Ratings:
Drain−Source Voltage (Note 1), V
Drain−Gate Voltage (R
Gate−Source Voltage, V
Pulsed Drain Current (Note 3), I
Clamped Inductive Current (L = 100µH), I
Continuous Drain Current, I
Total Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case, 10sec), T
Maximum Thermal Resistance, Junction−to−Case, R
Typical Thermal Resistance, Case−to−Sink (Note 4), R
Maximum Thermal Resistance, Junction−to−Ambient, R
Note 1. T
Note 2. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Mounting surface flat, smooth, and greased.
T
T
Derate Above 25°C
C
C
= +25°C
= +100°C
J
= +25° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), P
GS
GS
= 20kΩ, Note 1), V
N−Channel Enhancement Mode,
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
DM
tot
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LM
J
NTE2392
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
thCS
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
L
. . . . . . . . . .
−55° to +150°C
−55° to +150°C
0.83°C/W
1.2W/°C
0.1°C/W
30°C/W
+300°C
150W
100V
100V
160A
160A
±20V
40A
25A
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NTE2392 Summary of contents
Page 1
... N−Channel Enhancement Mode, Description: The NTE2392 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control ...
Page 2
Electrical Characteristics: (T Parameter Drain−Source Breakdown Voltage Zero−Gate Voltage Drain Current Gate−Body Leakage Current Gate Threshold Voltage On−State Drain Current Static Drain−Source On Resistance Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance Turn−On Time Rise Time Turn−Off Delay Time ...
Page 3
Max .350 (8.89) .312 (7.93) Min Source .215 (5.45) .430 (10.92) Gate .875 (22.2) Dia Max .063 (1.6) Max 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .188 (4.8) R Max .525 (13.35) R Max Drain/Case Seating ...