BAS16D-V-GS08 Vishay / Small Signal & Opto Products (SSP), BAS16D-V-GS08 Datasheet - Page 2

• Manufacturer Part Number: BAS16D-V-GS08
• Description: Diode, Small Signal; 250 mA; 1.25 V (Max.); 350 mW; 375 degC/W; 2 pF (Max.)
• Manufacturer: Vishay / Small Signal & Opto Products (SSP)

Specifications of BAS16D-V-GS08

• Capacitance: 2 pF (Max.)
• Capacitance, Junction: 2 pF
• Current, Forward: 250 mA
• Current, Reverse: 1 μA
• Current, Surge: 2 A
• Package Type: SOD-123
• Power Dissipation: 350 mW
• Primary Type: Rectifier
• Speed, Switching: Standard
• Temperature, Junction, Maximum: +150 °C
• Thermal Resistance, Junction To Ambient: 375 °C⁄W
• Time, Recovery: 6 ns
• Time, Reverse Recovery: 6 nS (Max.)
• Voltage, Forward: 1.25 V
• Voltage, Reverse: 75 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

BAS16D-V
Vishay Semiconductors
Thermal Characteristics
T
1)
Electrical Characteristics
T
1)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
2
Maximum junction temperature
Storage temperature
Forward voltage
Leakage current
Diode capacitance
Reverse recovery time
Thermal resistance junction to
ambient air
amb
amb
Valid provided electrodes are kept at ambient temperature
Valid provided electrodes are kept at ambient temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Figure 1. Forward characteristics
I
I
I
I
V
V
V
V
I
I
F
F
F
F
F
R
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 10 mA to I
= 1 mA, R
= 25 V, T
= 75 V
= 75 V, T
= 0; f = 1 MHz
Test condition
Test condition
J
J
L
= 150 °C
= 150 °C
= 100 Ω
R
= 10 mA,
Symbol
R
C
V
V
V
V
Figure 2. Dynamic Forward Resistance vs. Forward Current
I
I
I
t
thJA
R
R
R
tot
rr
F
F
F
F
Symbol
T
T
S
j
Min
- 65 to 150
Value
Typ.
150
1)
375
Max
1.00
1.25
715
855
30
50
1
2
6
1)
Unit
°C
°C
°C/W
Unit
mV
mV
µA
µA
µA
pF
ns
V
V