US1G-E3/61T General Semiconductor / Vishay, US1G-E3/61T Datasheet

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US1G-E3/61T

Manufacturer Part Number
US1G-E3/61T
Description
RECTIFIER, 1A, 400V, GPP, US1
Manufacturer
General Semiconductor / Vishay
Datasheet

Specifications of US1G-E3/61T

Capacitance, Junction
15 pF
Current, Forward
1 A
Current, Reverse
50 μA
Current, Surge
30 A
Package Type
DO-214AC (SMA)
Primary Type
Rectifier
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
50 ns
Voltage, Forward
1 V
Voltage, Reverse
400 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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120
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59 950 000
Company:
Part Number:
US1G-E3/61T
Quantity:
59 950 000
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
t
rr
F
DO-214AC (SMA)
Surface Mount Ultrafast Rectifier
A
= 25 °C unless otherwise noted)
50 V to 1000 V
50 ns, 75 ns
1.0 V, 1.7 V
150 °C
1.0 A
L
30 A
= 110 °C
SYMBOL
T
V
J
V
I
I
V
F(AV)
, T
FSM
RRM
RMS
DC
STG
US1A
UA
50
35
50
FEATURES
TYPICAL APPLICATIONS
For
freewheeling application in switching mode converters
and inverters for consumer, computer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
peak of 260 °C
and WEEE 2002/96/EC
US1B
100
100
use
UB
70
Vishay General Semiconductor
US1D
in
200
140
200
UD
- 55 to + 150
high
US1G
400
280
400
UG
1.0
30
frequency
US1A thru US1M
US1J
600
420
600
UJ
US1K
800
560
800
UK
rectification
US1M
1000
1000
UM
700
UNIT
°C
V
V
V
A
A
and
1

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US1G-E3/61T Summary of contents

Page 1

... RRM RMS V 50 100 DC = 110 ° F(AV) I FSM STG US1A thru US1M Vishay General Semiconductor in high frequency rectification US1D US1G US1J US1K US1M 200 400 600 800 1000 140 280 420 560 700 200 400 600 800 1000 1 150 and ...

Page 2

... US1D US1G US1J US1K US1M 1.0 1 US1D US1G US1J US1K US1M 75 27 DELIVERY MODE 1800 7" diameter plastic tape and reel 7500 13" diameter plastic tape and reel 1800 7" diameter plastic tape and reel 7500 13" diameter plastic tape and reel T = 110 ° ...

Page 3

US1A thru US1M Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.194 (4.93) 4 Cathode Band 0.066 (1.68) 0.110 (2.79) 0.100 ...

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