SUD10P06-280L-E3 Siliconix / Vishay, SUD10P06-280L-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD10P06-280L-E3
• Description: MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.13Ohm; ID -10A; TO-252; PD 37W; VGS +/-20V
• Manufacturer: Siliconix / Vishay

Specifications of SUD10P06-280L-E3

• Current, Drain: -10 A
• Gate Charge, Total: 11.5 nC
• Package Type: TO-252
• Polarization: P-Channel
• Power Dissipation: 37 W
• Resistance, Drain To Source On: 0.13 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 17 ns
• Time, Turn-on Delay: 9 ns
• Transconductance, Forward: 6 S
• Voltage, Breakdown, Drain To Source: -60 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SUD10P06-280L
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics T
Pulsed Current
Forward Voltage
Reverse Recovery Time
c
c
b
c
c
b
b
J
= 25 °C, unless otherwise noted
b
Symbol
R
V
I
t
t
I
C
V
I
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
g
SM
t
oss
t
t
DS
rss
SD
iss
rr
fs
gs
gd
r
f
g
C
V
I
V
V
V
V
= 25 °C
D
DS
V
DS
DS
GS
GS
≅ 10 A, V
DS
= - 30 V, V
= - 60 V, V
= - 60 V, V
= - 10 V, I
= - 10 V, I
I
V
= - 25 V, V
V
F
V
V
V
V
V
V
V
DS
DS
= 10 A, dI/dt = 100 A/µs
DS
DS
DS
GS
a
I
GS
DS
DD
F
Test Conditions
= V
= - 5 V, V
= 10 A, V
= 0 V, V
= 0 V, I
= - 60 V, V
= - 4.5 V, I
= - 10 V, I
= - 15 V, I
= - 30 V, R
GEN
GS
D
D
GS
GS
GS
GS
, I
= - 5 A, T
= - 5 A, T
= - 10 V, R
= - 10 V, I
D
D
= 0 V, T
= 0 V, T
GS
= 0 V, f = 1 MHz
GS
= - 250 µA
GS
= - 250 µA
D
D
GS
D
= ± 20 V
L
= - 10 V
= - 5 A
= - 5 A
= 0 V
= - 2 A
= 3 Ω
= 0 V
J
J
J
J
G
= 125 °C
= 175 °C
D
= 125 °C
= 175 °C
= 2.5 Ω
= - 10 A
Min.
- 1.0
- 60
- 10
Typ.
0.130
0.210
- 2.0
11.5
635
100
3.5
30
16
17
19
50
6
2
9
a
± 100
0.170
0.375
0.280
Max.
- 150
- 3.0
- 1.3
0.31
- 50
- 20
- 1
25
20
20
30
35
80
Unit
nA
µA
pF
nC
ns
ns
Ω
V
A
S
A
V