NTE294 NTE Electronics, Inc., NTE294 Datasheet
NTE294
Manufacturer Part Number
NTE294
Description
Transistor; PNP; Silicon; TO92; 60 V; 50 V; 5 V; 1 A; 1 W (Collector); 150 degC
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Powerr
Datasheet
1.NTE293.pdf
(2 pages)
Specifications of NTE294
Complement To
NPN
Current, Collector
1 A
Current, Collector Cutoff
20 μA
Current, Continuous Collector
1 A
Current, Gain
120 to 240
Frequency
200 MHz
Material Type
Silicon
Package Type
Giant TO-92
Polarity
PNP
Power Dissipation
1 W
Primary Type
Si
Temperature Range, Junction, Operating
150 °C
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
50 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
50 V
Voltage, Collector To Emitter, Saturation
0.2 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1.5 V
Description:
The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type
package designed for use in low–frequency power amplification and drive applications.
Features:
D Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (h
Note 2. Pulse measurement.
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Current–Gain Bandwidth Product
Collector Output Capacitance
Continuous
Peak
10% of each other.
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EBO
CBO
NTE293 (NPN) & NTE294 (PNP)
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Amplifier and Driver
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
V
V
V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
= +25 C unless otherwise specified)
(BR)CBO
(BR)CEO
(BR)EBO
I
CE(sat)
BE(sat)
C
CBO
h
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
ob
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
CB
CB
CE
CE
CB
= 10 A, I
= 10 A, I
= 2mA, I
= 500mA, I
= 500mA, I
= 10V, I
= 20V, I
= 10V, I
= 5V, I
= 10V, I
Test Conditions
B
B
E
C
E
E
C
e
= 0
= 1A, Note 2
= 0
= 0
B
B
= 0, f = 1MHz
= 50mA, f = 200MHz
= 0
= 500mA, Note 2
= 50mA, Note 2
= 50mA, Note 2
Min
120
60
50
50
5
–
–
–
–
–
FE
) matched to within
0.85
Typ
100
200
0.2
11
–
–
–
–
–
–55 to +150 C
Max
240
0.1
0.4
1.2
20
–
–
–
–
–
+150 C
Unit
MHz
1.5A
pF
V
V
V
V
V
60V
50V
A
1W
5V
1A
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NTE294 Summary of contents
Page 1
... NTE293 (NPN) & NTE294 (PNP) Silicon Complementary Transistors Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications. Features: D Low Collector–Emitter Saturation Voltage Absolute Maximum Ratings: (T Collector– ...
Page 2
Max .512 (13.0) Min .100 (2.54) .240 (6.09) Max Seating Plane .026 (.66) Dia Max .200 (5.08) Max ...