NTE2408 NTE Electronics, Inc., NTE2408 Datasheet
NTE2408
Manufacturer Part Number
NTE2408
Description
Transistor, NPN; SOT-23; NPN; 15 V; 30 V; 3 V; 50 mA; 200 mW; -65 to 200 degC;
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, General Purposer
Datasheet
1.NTE2408.pdf
(2 pages)
Specifications of NTE2408
Current, Collector
100 mA
Current, Emitter
200 mA
Current, Gain
150
Device Dissipation
200 mW
Frequency
300 MHz
Gain, Dc Current, Maximum
250
Gain, Dc Current, Minimum
25
Package Type
SOT-23
Polarity
NPN
Power Dissipation
200 mW
Primary Type
Si
Temperature Range, Junction, Operating
-65 to 200 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Base
30
Voltage, Breakdown, Collector To Emitter
65 V
Voltage, Breakdown, Emitter To Base
3.5 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
65 V
Voltage, Collector To Emitter, Saturation
200 mV
Voltage, Emitter To Base
6 V
Voltage, Saturation, Collector To Emitter
200 mV
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE2408 is a silicon NPN general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Peak Emitter Current, I
Peak Base Current, I
Total Power Dissipation (T
Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Tab, R
Thermal Resistance, Tab–to–Soldering Points, R
Thermal Resistance, Soldering Points–to–Ambient (Note 1), R
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (T
Note 2. V
Note 3. V
Collector Cutoff Current
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
Continuous
Peak
BE
BE(sat)
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
decreases by about 2mV/K with increasing temperature.
decreases by about 1.7mV with increasing temperature.
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BM
General Purpose Amp, Surface Mount
EM
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +60 C, Note 1), P
CES
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
(Compl to NTE2409)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
I
CE(sat)
V
CBO
BE
thJT
NTE2408
V
V
V
V
I
I
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CB
CB
CE
CE
= 10mA, I
= 100mA, I
tot
= 30V, I
= 30V, I
= 5V, I
= 5V, I
thTS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
E
B
= 2mA, Note 2
= 10mA, Note 2
B
= 0
= 0, T
= 0.5mA, Note 3
= 5mA, Note 3
A
= +150 C
thSA
. . . . . . . . . . . . . . . . . . . .
Min
580
–
–
–
–
–
Typ
660
200
90
–
–
–
–65 to +150 C
Max
700
770
250
600
15
5
280K/W
200mW
+150 C
100mA
200mA
200mA
200mA
60K/W
90K/W
Unit
mV
mV
mV
mV
nA
80V
80V
65V
A
6V
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NTE2408 Summary of contents
Page 1
... General Purpose Amp, Surface Mount Description: The NTE2408 is a silicon NPN general purpose transistor in a SOT–23 type surface mount package designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits. Absolute Maximum Ratings: Collector–Base Voltage, V CBO Collector– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Capacitance Small–Signal Current Gain Noise Figure Note 3. V decreases by about 1.7mV with increasing temperature. BE(sat) B .074 (1.9) .118 (3.0) Max = +25 C ...