SI7461DP-T1-E3 Siliconix / Vishay, SI7461DP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7461DP-T1-E3
• Description: P-CHANNEL 60-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI7461DP-T1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72567
S09-0227-Rev. F, 09-Feb-09
0.020
0.016
0.012
0.008
0.004
0.000
10
70
10
8
6
4
2
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
1 0
0.2
On-Resistance vs. Drain Current
= 17 A
25
= 30 V
V
SD
Q
T
V
g
J
GS
- Source-to-Drain Voltage (V)
I
= 150 °C
2 0
D
- Total Gate Charge (nC)
0.4
= 4.5 V
- Drain Current (A)
50
Gate Charge
3 0
0.6
75
V
4 0
0.8
GS
T
= 10 V
J
100
= 25 °C
5 0
1.0
125
60
1.2
8000
7000
6000
5000
4000
3000
2000
1000
0.04
0.03
0.02
0.01
0.00
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
rss
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
-
V
I
D
25
GS
10
= 14.4 A
V
V
= 10 V
2
DS
GS
T
J
0
- Junction T emperature ( °C)
- Gate-to-Source V oltage (V)
- Drain-to-Source Voltage (V)
C
20
oss
Capacitance
25
4
50
I
30
Vishay Siliconix
D
= 14.4 A
C
iss
6
75
Si7461DP
40
www.vishay.com
100
8
50
125
150
10
60
3