DF10M-E3/45 General Semiconductor / Vishay, DF10M-E3/45 Datasheet
DF10M-E3/45
Manufacturer Part Number
DF10M-E3/45
Description
Rectifier, Miniature Glass Passivated Single-Phase; 1000 V; 1; PCB Mount
Manufacturer
General Semiconductor / Vishay
Datasheet
1.DF04M-E345.pdf
(3 pages)
Specifications of DF10M-E3/45
Capacitance, Junction
25 pF
Configuration
Single Phase
Current Squared Time Rating
10
Current, Forward
1 A
Current, Reverse
500 μA
Current, Surge
50 A
Package Type
DFM
Primary Type
Bridge Rectifier
Speed, Switching
Standard
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-50 to +150 °C
Voltage, Forward
1.1 V
Voltage, Reverse
1000 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified
current at T
Peak forward surge current single
sine-wave superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage
temperature range
Miniature Glass Passivated Single-Phase Bridge Rectifiers
T
A
V
I
J
I
F(AV)
FSM
= 40 °C
RRM
V
I
max.
R
F
~
~
~
Case Style DFM
~
A
= 25 °C unless otherwise noted)
50 V to 1000 V
SYMBOL
150 °C
T
1.1 V
50 A
5 µA
J
V
V
1 A
I
I
V
F(AV)
, T
FSM
RRM
RMS
I
DC
2
t
STG
DF005M
DF005
50
35
50
DF01M
DF01
100
100
70
FEATURES
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for SMPS, lighting ballaster, adapter,
battery charger, home appliances, office equipment,
and telecommunication applications.
MECHANICAL DATA
Case: DFM
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DF02M
DF02
200
140
200
Vishay General Semiconductor
- 55 to + 150
DF04M
DF04
400
280
400
1.0
50
10
DF005M thru DF10M
DF06M
DF06
600
420
600
DF08M
DF08
800
560
800
DF10M
DF10
1000
1000
700
UNIT
A
°C
V
V
V
A
A
2
s
1
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DF10M-E3/45 Summary of contents
Page 1
... V 50 100 200 RRM 140 RMS V 50 100 200 DC I F(AV) I FSM STG DF005M thru DF10M Vishay General Semiconductor DF04M DF06M DF08M DF10M DF04 DF06 DF08 DF10 400 600 800 1000 280 420 560 700 400 600 800 1000 1 150 UNIT ...
Page 2
... DF005M thru DF10M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous forward 1.0 A voltage drop per diode Maximum reverse current °C A rated DC blocking T = 125 °C A voltage per diode Typical junction 4 MHz capacitance per diode THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" ...
Page 3
... DF005M thru DF10M Vishay General Semiconductor ° 1.0 MHz mVp-p sig 10 100 Reverse Voltage (V) 0.1 ...