NTE2388 NTE Electronics, Inc., NTE2388 Datasheet - Page 2

• Manufacturer Part Number: NTE2388
• Description: MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.18Ohm; ID 18A; TO-220; PD 125W; VGS +/-20V
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE2388

• Current, Drain: 18 A
• Gate Charge, Total: 38 nC
• Package Type: TO-220
• Polarization: N-Channel
• Power Dissipation: 125 W
• Resistance, Drain To Source On: 0.18 Ohm
• Resistance, Thermal, Junction To Case: 1 °C⁄W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 80 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 6 mhos
• Transistor Type: N Channel Enhancement Mode
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.8 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics: (T
Note 1. Pulse test: Pulse width
OFF Characteristics
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
Gate–Body Leakage Current, Forward
Gate–Body Leakage Current, Reverse
ON Characteristics (Note 1)
Gate Threshold Voltage
Static Drain–Source On Resistance
On–State Drain Current
Forward Transconductance
Dynamic Characteristics
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Switching Characteristics (Note 1)
Turn–On Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Source Drain Diode Characteristics (Note 1)
Forward ON Voltage
Forward Turn–On Time
Reverse Recovery Time
Internal Package Inductance
Internal Drain Inductance
Internal Source Inductance
Parameter
C
= +25 C unless otherwise specified)
300 s, Duty cycle
V
Symbol
R
V
(BR)DSS
I
I
I
t
GSSR
C
t
I
GSSF
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
DSS
Q
g
t
L
L
t
on
oss
t
t
SD
rss
rr
iss
fs
gs
gd
r
f
d
s
g
I
V
V
T
V
V
V
V
V
V
V
f = 1MHz
V
V
I
I
Measured from the contact
screw on tab to center of die
Measured from the drain lead
0.25” from package to center
of die
Measured from the source
lead 0.25” from package to
source bond pad
D
R
D
S
C
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
DS
g
= Rated I
= 250 A, V
= Rated I
= +125 C
= 4.7
= 0, V
= 0, V
= V
= 25V, V
= 160V, V
= 0, V
= 0, V
= 10V, I
= 10V, V
[ 75V, I
Test Conditions
3.2V, I
GS
GSF
GSR
DS
DS
, I
2%.
D
D
D
D
D
, V
GS
DS
D
= Max Rating
= 160V,
GS
= 10A
GS
= 250 A
= 10A
= 20V
= 20V
= 10A
GS
= 0,
= 0
= 10V,
3.2V
= 0
PEAK
,
Limited by stray inductance
Min
200
18
–
–
–
–
2
–
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
450
1.8
3.5
4.5
7.5
38
16
22
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1000
1600
Max
0.18
200
100
100
750
300
2.0
30
60
80
60
60
–
4
–
–
–
–
–
–
–
–
mhos
Unit
nC
nC
nC
nH
nH
nH
nA
nA
ns
ns
ns
ns
ns
pf
pf
pf
V
V
A
V
A
A