IRF7836PBF International Rectifier, IRF7836PBF Datasheet
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Manufacturer Part Number
IRF7836PBF
Description
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.5 Milliohms; ID 17A; SO-8; PD 2.5W; VGS +/-20V
Manufacturer
International Rectifier
Specifications of IRF7836PBF
Current, Drain
17 A
Gate Charge, Total
18 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
4.5 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
12 ns
Time, Turn-on Delay
8.9 ns
Transconductance, Forward
70 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Applications
l
l
Benefits
l
l
l
l
l
V
V
I
I
I
P
P
T
T
R
R
Notes through
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
@ T
@ T
and Current
Synchronous MOSFET for Notebook
Processor Power
Synchronous Rectifier MOSFET for
isolated DC-DC Converters in
Networking Systems
Very Low R
Low Gate Charge
Fully Characterized Avalanche Voltage
100% Tested for R
Lead-Free
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
at 4.5V V
are on page 9
G
Parameter
Parameter
f
f
GS
fg
g
GS
GS
@ 10V
@ 10V
V
30V
DSS
G
S
S
S
1
2
3
4
Top View
5.7m : @V
Typ.
–––
–––
R
DS(on)
-55 to + 150
8
HEXFET
7
6
5
IRF7836PbF
Max.
0.02
± 20
130
2.5
1.6
30
17
13
D
D
D
D
A
A
GS
max
Max.
®
= 10V 18nC
20
50
Power MOSFET
SO-8
Qg
Units
Units
W/°C
°C/W
°C
W
V
A
1
Related parts for IRF7836PBF
IRF7836PBF Summary of contents
... Junction-to-Drain Lead R θJL Junction-to-Ambient R θJA Notes through are on page 9
V DSS 5. 30V Top View @ 10V GS @ 10V Typ. g ––– fg ––– IRF7836PbF ® HEXFET Power MOSFET R max Qg DS(on) = 10V 18nC SO-8 Max. Units 30 V ± 130 2.5 W 1.6 0.02 W/° ...
... IRF7836PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...
... IRF7836PbF SO-8 Package Outline & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT à ...
... TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION 330.00 (12.992) MAX. = 25Ω 13A. AS Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. IRF7836PbF 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12.40 ( .488 ) 9 ...
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