IRFL9110PBF Vishay PCS, IRFL9110PBF Datasheet - Page 2

• Manufacturer Part Number: IRFL9110PBF
• Description: MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2 Ohms; ID -1.1A; SOT-223; PD 3.1W; VGS +/-2
• Manufacturer: Vishay PCS

Specifications of IRFL9110PBF

• Current, Drain: -1.1 A
• Gate Charge, Total: 8.7 nC
• Package Type: SOT-223
• Polarization: P-Channel
• Power Dissipation: 3.1 W
• Resistance, Drain To Source On: 1.2 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 15 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 0.82 S
• Voltage, Breakdown, Drain To Source: -100 V
• Voltage, Forward, Diode: -5.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

IRFL9110PbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
∆V
I
I
V
t
Q
t
I
L
V
L
GSS
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
on
DSS
rr
d(on)
r
d(off)
f
D
S
SD
(BR)DSS
fs
rr
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
V
(BR)DSS
R
DD=
G
= 25Ω, I
-25V, starting T
/∆T
J
Breakdown Voltage Temp. Coefficient
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Internal Drain Inductance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Internal Source Inductance
Fall Time
= -4.4A. (See Figure 12)
J
= 25°C, L =7.7 mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
T
Pulse width ≤ 300µs; duty cycle ≤ 2%.
I
-100
–––
–––
SD
0.82
Min. Typ. Max. Units
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.15 0.30
–––
J
Min. Typ. Max. Units
≤ 150°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ -4.0A, di/dt ≤−75A/µs, V
-0.091 –––
–––
–––
–––
–––
–––
–––
–––
––– -100
––– -500
–––
–––
–––
–––
200
––– -100
80
4.0
10
27
15
94
18
6.0
17
-5.5
160
–––
-8.8
-4.0
–––
100
–––
–––
–––
–––
–––
–––
-1.1
–––
1.2
8.7
2.2
4.1
–––
–––
V/°C Reference to 25°C, I
µC
ns
nC
nH
µA
nA
pF
V
ns
V
A
Ω
V
S
Between lead, 6mm(0.25in)
from package and center
of die contact.
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
di/dt = 100A/µs
T
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
ƒ = 1.0MHz, See Fig. 5
R
D
D
J
J
DD
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25°C, I
= 25°C, I
=-4.0A
= -4.0A
= 24 Ω
= 11 Ω,
≤ V
= 0V, I
= V
= -50V, I
= -100V, V
= -80V, V
=-80V
= -50V
= 25V
= -10V, I
= -20V
= 20V
= -10V, See Fig. 6 and 13
= 0V
(BR)DSS
GS
, I
D
S
F
Conditions
D
= 250µA
Conditions
D
= -1.1A, V
=-4.0A
D
GS
= 250µA
,
See Fig. 10
= 0.66 A
= 0.66A
GS
= 0V, T
= 0V
D
= 1mA
GS
J
= 125°C
G
= 0V
S
G
+L
D
)
D
S
S
D
2