IRFD9014PBF Vishay PCS, IRFD9014PBF Datasheet - Page 7

• Manufacturer Part Number: IRFD9014PBF
• Description: MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.5Ohm; ID -1.1A; HD-1; PD 1.3W; VGS +/-20V; -55
• Manufacturer: Vishay PCS

Specifications of IRFD9014PBF

• Current, Drain: -1.1 A
• Gate Charge, Total: 12 nC
• Package Type: HD-1
• Polarization: P-Channel
• Power Dissipation: 1.3 W
• Resistance, Drain To Source On: 0.5 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 10 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 0.7 S
• Voltage, Breakdown, Drain To Source: -60 V
• Voltage, Forward, Diode: -5.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91128.
Document Number: 91125
S09-1829-Rev. B, 21-Sep-09
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
dI/dt
current transformer
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
IRFD014, SiHFD014
+
-
V
DD
Vishay Siliconix
www.vishay.com
7