SKM 200GB12E4 Sindopower / Semikron, SKM 200GB12E4 Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
SKM 200GB12E4
Manufacturer Part Number
SKM 200GB12E4
Description
IGBT; D-56; IGBT; 1200 V; 310 A; 1200 V; 20 V; 5.5 V (Typ.)
Manufacturer
Sindopower / Semikron
Type
SPTr
Datasheet
1.SKM_200GB12E4.pdf
(4 pages)
Specifications of SKM 200GB12E4
Capacitance, Gate
13 nF
Current, Collector
300 A
Energy Rating
33 mJ
Fall Time
55 ns
Operating And Storage Temperature
-40 to 150°C (Operating), -40 to 125°C (Storage)
Package Type
D56
Polarity
N-Channel
Primary Type
Si
Resistance, Thermal, Junction To Case
0.095 K/W
Switching Loss
18 mJ
Time, Rise
50 ns
Transistor Type
IGBT
Voltage, Breakdown, Collector To Emitter
1200 V
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
1.9 V
Voltage, Gate Threshold, Range
5.5 V
Voltage, Gate To Source
±20 V
Voltage, Saturation, Collector To Emitter
1200 V
Lead Free Status / Rohs Status
RoHS Compliant part
SKM 200GB128D
SPT IGBT Module
SKM 200GB128D
Features
Typical Applications
2
SEMITRANS
GB
®
3
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Characteristics
Symbol
Inverse Diode
Module
11-09-2006 SEN
Conditions
min.
typ.
© by SEMIKRON
max.
Units