NTE2312 NTE Electronics, Inc., NTE2312 Datasheet
NTE2312
Manufacturer Part Number
NTE2312
Description
Transistor, NPN; TO-220; NPN; 700 V; 9 V; 8 A; -65 to 150 degC; 62.5 degC/W; 5
Manufacturer
NTE Electronics, Inc.
Type
High Voltage, Switchr
Datasheet
1.NTE2312.pdf
(3 pages)
Specifications of NTE2312
Current, Collector
8 A
Current, Emitter
12 A
Current, Gain
5 to 30
Frequency
4 MHz
Gain, Dc Current, Maximum
30
Gain, Dc Current, Minimum
5
Package Type
TO-220
Polarity
NPN
Power Dissipation
2 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1.56 °C/W
Temperature, Junction, Operating
-65 to 150 °C
Thermal Resistance, Junction To Ambient
62.5 °C⁄W
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
400 V
Voltage, Collector To Emitter
400 V
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Emitter To Base
9 V
Description:
The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115V and 220V switch–mode applications such as switching regulators, inverters, motor controls,
solenoid/relay drivers, and deflection circuits.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Emitter Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Derate Above 25 C
Derate Above 25 C
B
E
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
High Voltage, High Speed Switch
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
CEO(sus)
CEV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
thJC
NTE2312
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%.
L
. . . . . . . . . . . . . . . . . . . . . . .
–65 to +150 C
–65 to +150 C
640mW/ C
16mW/ C
1.56 C/W
62.5 C/W
+275 C
400V
700V
80W
16A
12A
24A
2W
9V
8A
4A
8A
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NTE2312 Summary of contents
Page 1
... High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch–mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics (Note 2) Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Dynamic Characteristics Current–Gain Bandwidth Product Output Capacitance Switching Characteristics (Resistive ...
Page 3
Max .147 (3.75) Dia Max .070 (1.78) Max Base .100 (2.54) .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Emitter Collector/Tab ...