GAL22V10D-25LJN Lattice, GAL22V10D-25LJN Datasheet - Page 6
GAL22V10D-25LJN
Manufacturer Part Number
GAL22V10D-25LJN
Description
PLD, 10 MC 38.5MHZ EECMOS 5V 28 PLCC
Manufacturer
Lattice
Datasheet
1.GAL22V10D-25LPN.pdf
(7 pages)
Specifications of GAL22V10D-25LJN
Circuit Type
Advanced, Electrically Erasable
Current, Supply
75 mA
Logic Function
Programmable
Logic Type
CMOS
Package Type
PLCC-28
Special Features
Tri-State
Temperature, Operating, Range
0 to +75 °C
Voltage, Supply
4.75 to 5.25 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GAL22V10D-25LJN
Manufacturer:
AMD
Quantity:
1 543
Company:
Part Number:
GAL22V10D-25LJN
Manufacturer:
Lattice Semiconductor Corporation
Quantity:
10 000
Part Number:
GAL22V10D-25LJN
Manufacturer:
LATTICE
Quantity:
20 000
Company:
Part Number:
GAL22V10D-25LJNI
Manufacturer:
Lattice Semiconductor Corporation
Quantity:
10 000
3-state levels are measured 0.5V from steady-state active
level.
Output Load Conditions (except D-4) (see figure below)
Switching Test Conditions
Input Pulse Levels
Input Rise and
Fall Times
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
Test Condition
A
B
C
FROM OUTPUT (O/Q)
UNDER TEST
*C
Active High
Active Low
Active High
Active Low
L
INCLUDES TEST FIXTURE AND PROBE CAPACITANCE
D-4/-5/-7
D-10/-15/-20/-25
R
2
300Ω
300Ω
300Ω
R
∞
∞
+5V
1
R
1
390Ω
390Ω
390Ω
390Ω
390Ω
1.5ns 10% – 90%
2.0ns 10% – 90%
R
2
C *
GND to 3.0V
See Figure
L
1.5V
1.5V
TEST POINT
50pF
50pF
50pF
5pF
5pF
C
L
12
GAL22V10D-4 Output Load Conditions (see figure below)
FROM OUTPUT (O/Q)
UNDER TEST
Test Condition
A
B
C
Specifications GAL22V10
Z to Active High at 1.9V
Z to Active Low at 1.0V
Active High to Z at 1.9V
Active Low to Z at 1.0V
TEST POINT
Z
0
= 50Ω, C
50Ω
50Ω
50Ω
50Ω
50Ω
R
1
L
*
50pF
50pF
50pF
50pF
50pF
C
+1.45V
L
R
1