SKM 400 GB 123 D Sindopower / Semikron, SKM 400 GB 123 D Datasheet
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Manufacturer Part Number
SKM 400 GB 123 D
Description
IGBT; D-56; IGBT; 1200 V; 400 A; 1200 V; 20 V; 5.5 V (Typ.)
Manufacturer
Sindopower / Semikron
Specifications of SKM 400 GB 123 D
Capacitance, Gate
22 nF
Current, Collector
400 A
Energy Rating
78 mJ
Fall Time
80 ns
Operating And Storage Temperature
–40 to +150 °C
Package Type
D56
Polarity
N-Channel
Primary Type
Si
Resistance, Thermal, Junction To Case
0.05 K/W
Switching Loss
38 mJ
Time, Rise
115 ns
Transistor Type
IGBT
Voltage, Breakdown, Collector To Emitter
1200 V
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
2.5 V
Voltage, Gate Threshold, Range
5.5 V (Typ.)
Voltage, Gate To Source
±20 V
Voltage, Saturation, Collector To Emitter
1200 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
SKM 400GB123D
IGBT Modules
SKM 400GB123D
Features
Typical Applications
1
SEMITRANS
GB
®
3
Absolute Maximum Ratings
Symbol
IGBT
Inverse Diode
Module
Characteristics
Symbol
IGBT
11-09-2006 RAA
Conditions
Conditions
min.
Values
typ.
© by SEMIKRON
max.
Units
Units
Related parts for SKM 400 GB 123 D
SKM 400 GB 123 D Summary of contents
SKM 400GB123D ® SEMITRANS 3 IGBT Modules SKM 400GB123D Features Typical Applications GB 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Module Characteristics Symbol Conditions IGBT 11-09-2006 RAA Values Units min. typ. max. Units © by SEMIKRON ...
SKM 400GB123D ® SEMITRANS 3 IGBT Modules SKM 400GB123D Features Typical Applications GB 2 Characteristics Symbol Conditions Inverse Diode Module This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices ...
SKM 400GB123D ® SEMITRANS 3 IGBT Modules SKM 400GB123D Features Typical Applications Symbol Conditions Z th(j-c)l Z th(j-c)D 11-09-2006 RAA Values Units © by SEMIKRON ...
SKM 400GB123D UL Recognized 6 11-09-2006 RAA File 63 532 © by SEMIKRON ...
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