DG403DY-T1-E3/BKN Siliconix / Vishay, DG403DY-T1-E3/BKN Datasheet - Page 4

• Manufacturer Part Number: DG403DY-T1-E3/BKN
• Description: DUAL SPDT ANALOG SWITCH
• Manufacturer: Siliconix / Vishay

Specifications of DG403DY-T1-E3/BKN

• Charge Injection: 60 nC
• Current, Source, Off-state: 0.5 nA
• Number Of Channels: 2
• Package: 16-Pin SOIC N
• Resistance, Drain To Source On: 45 Ohms
• Time, Turn-on: 150 ns
• Voltage, Supply: 44 v
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

DG401, DG403, DG405
Vishay Siliconix
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Δ Drain-Source
On-Resistance
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
Input Current V
Input Current V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay (DG403)
Charge Injection
Off Isolation Reject Ratio
Channel-to-Channel Crosstalk
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
IN
= input voltage to perform proper function.
IN
IN
Low
High
e
a
C
V
ΔR
Symbol
R
D
ANALOG
C
C
OIRR
X
I
I
I
I
, C
DS(on)
t
S(off)
D(off)
D(on)
t
GND
OFF
DS(on)
TALK
S(off)
D(off)
I
I
ON
t
I+
Q
I
I-
IH
IL
D
L
S(on)
I
V
S
V
D
I
V+ = 13.5 V, V- = - 13.5 V
V+ = 16.5 V, V- = - 16.5 V
V+ = 16.5 V, V- = - 16.5 V
V+ = 16.5 V, V- = - 16.5 V
V+ = 16.5 V, V- = - 16.5 V
S
L
= - 10 mA, V
R
R
=
V
R
V
V
V+ = 15 V, V- = - 15 V
= 5 V, V
= - 10 mA, V
L
L
f = 1 MHz, V
V
gen
IN
IN
L
±
Unless Specified
Test Conditions
= 300 Ω, C
= 300 Ω, C
All Other = 2.4 V
All Other = 0.8 V
S
= 100 Ω, C
15.5 V, V
under test = 0.8 V
under test = 2.4 V
V
See Figure 2
= V
= 0 V, R
C
IN
f = 1 MHz
L
D
= 0 or 5 V
IN
= 10 nF
=
= 2.4 V, 0.8 V
D
±
gen
S
D
L
L
=
S
15.5 V
L
=
= 35 pF
= 35 pF
=
±
= 0 V
= 5 pF
= 0 Ω
±
±
5 V, 0 V
15.5 V
10 V
f
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Hot
Hot
Hot
b
- 0.01
- 0.01
- 0.04
0.005
0.005
- 0.01
- 0.01
Typ.
0.01
0.01
30
75
30
35
60
72
90
12
12
39
3
c
S09-2561-Rev. I, 30-Nov-09
Document Number: 70049
- 40 °C to 85 °C
Min.
- 0.5
- 0.5
- 15
- 10
- 5
- 5
- 1
- 1
- 1
- 1
- 5
- 1
- 5
5
D Suffix
d
Max.
150
100
0.5
0.5
15
45
55
10
3
5
5
5
1
1
1
1
5
1
5
d
Unit
nA
µA
pC
dB
µA
ns
pF
Ω
V