SUM110P04-04L-E3 Siliconix / Vishay, SUM110P04-04L-E3 Datasheet

no-image

SUM110P04-04L-E3

Manufacturer Part Number
SUM110P04-04L-E3
Description
P-Channel 40-V (D-S) 175 DEG.C MOSFET
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SUM110P04-04L-E3

Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM110P04-04L-E3
Manufacturer:
TYCO
Quantity:
100
Notes:
a. Duty cycle ≤ 1 %.
b. When Mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72437
S-61964-Rev. C, 09-Oct-06
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient PCB Mount
Junction-to-Case
V
- 40
DS
Ordering Information: SUM110P04-04L
(V)
0.0062 at V
0.0042 at V
r
DS(on)
SUM110P04-04L (Lead (Pb)-free)
J
G
Top View
TO-263
P-Channel 40-V (D-S) 175 °C MOSFET
= 175 °C)
a
GS
GS
b
D
(Ω)
= - 4.5 V
= - 10 V
S
d
C
I
D
= 25 °C, unless otherwise noted
- 110
- 110
(A)
d
T
T
L = 0.1 mH
T
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• New Package with Low Thermal Resistance
b
G
Symbol
Symbol
T
R
R
J
V
P-Channel MOSFET
V
E
I
I
P
, T
DM
I
AS
thJA
thJC
GS
DS
AS
D
D
®
stg
Power MOSFET
S
D
- 55 to 175
SUM110P04-04L
Limit
Limit
- 110
- 110
- 240
375
± 20
3.75
- 40
- 75
281
0.4
40
c
Vishay Siliconix
www.vishay.com
°C/W
RoHS*
Unit
COMPLIANT
Unit
mJ
°C
W
V
A
Available
1

Related parts for SUM110P04-04L-E3

SUM110P04-04L-E3 Summary of contents

Page 1

... DS DS(on) 0.0042 0.0062 4 TO-263 Top View Ordering Information: SUM110P04-04L SUM110P04-04L (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage d Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUM110P04-04L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... S-61964-Rev. C, 09-Oct-06 200 175 150 4 V 125 100 0.010 ° 0.008 25 °C 125 °C 0.006 0.004 0.002 0.000 iss C rss SUM110P04-04L Vishay Siliconix 125 ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V Gate-to-Source Voltage ( Transfer Characteristics Drain Current (A) ...

Page 4

... SUM110P04-04L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (° On-Resistance vs. Junction Temperature 1000 100 150 ° 0.1 0.0001 0.001 0.01 t (Sec) in Avalanche Current vs. Time www.vishay.com 4 100 100 125 150 175 = 25 ° ° 150 °C ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72437. Document Number: 72437 S-61964-Rev. C, 09-Oct-06 100 125 150 175 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUM110P04-04L Vishay Siliconix 1000 Limited by r DS(on) 100 °C C Single Pulse 0.1 0.1 1 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

Related keywords