DS1315-5+ Dallas Semiconductor, DS1315-5+ Datasheet - Page 11
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DS1315-5+
Manufacturer Part Number
DS1315-5+
Description
PHANTOM TIME CHIP 16P DIP 5V
Manufacturer
Dallas Semiconductor
Datasheet
1.DS1315-5.pdf
(22 pages)
Specifications of DS1315-5+
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
AC ELECTRICAL OPERATING CHARACTERISTICS—ROM/
(V
DC OPERATING ELECTRICAL CHARACTERISTICS
(V
PARAMETER
Read Cycle Time
Address Setup Time
Address Hold Time
Read Recovery
Write Cycle
Write Recovery
Data Setup
Data Hold Time
PARAMETER
Average V
Current
Average V
Current,
(V
TTL Standby Current
(
CMOS Standby Current
(
Input Leakage Current
(any input)
Output Leakage Current
(any input)
Output Logic 1 Voltage
(I
Output Logic 0 Voltage
(I
Power-Fail Trip Point
Battery Switch Voltage
CEI
OE
CEI
OE
CEI
OE
CEI
OE
RST
CEI
CEI
CC
CC
OUT
OUT
CCO
Access Time
to Output Low Z
to Output High Z
Pulse Width
= 5.0V ±10%, T
= 3.3V ±10%, T
Access Time
to Output Low Z
to Output High Z
Pulse Width
Pulse Width
= V
= V
= 0.4 mA)
= 1.6 mA)
= V
IH
CCI
CCI
CC
CC
)
- 0.2)
Power-Supply
Power-Supply
- 0.3)
A
A
= Over the operating range.)
= Over the operating range.)
SYMBOL
SYMBOL
I
t
V
V
t
t
I
I
I
V
t
V
t
t
t
t
t
t
t
t
ODO
t
t
t
CC01
I
t
t
COE
OEE
I
RST
CC1
CC2
CC3
WC
CW
OW
WR
OD
AH
DH
RC
CO
OE
RR
AS
DS
LO
IL
OH
SW
OL
PF
11 of 22
MIN
MIN
2.4
2.8
65
10
65
55
55
10
30
65
-1
-1
5
5
5
5
0
V
V
or V
TYP
TYP
BAT1
BAT2
PF
,
,
MAX
MAX
2.97
100
1.1
0.4
55
55
25
25
+1
+1
3
2
DS1315 Phantom Time Chip
RAM
UNITS
UNITS
mA
mA
mA
mA
µA
µA
= V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
CCO
NOTES
NOTES
14
4
5
5
6
7
6
6
2
2