25LC640X-I/ST Microchip Technology Inc., 25LC640X-I/ST Datasheet - Page 2

• Manufacturer Part Number: 25LC640X-I/ST
• Description: SPI Serial EEPROM, 64 Kbit, Alternate Pinout, TSSOP8
• Manufacturer: Microchip Technology Inc.

Specifications of 25LC640X-I/ST

• Capacitance, Input: 7 pF
• Capacitance, Output: 7 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 1 mA (Read), 5 mA (Write)
• Current, Output, Leakage: ±1
• Data Retention: >200 yrs.
• Density: 64K
• Interface: SPI Bus
• Memory Type: Serial EEPROM
• Organization: 8192×8
• Package Type: TSSOP
• Temperature, Operating: -40 to +85 °C
• Time, Access: 230 ns
• Time, Address Hold: 250
• Time, Address Setup: 250
• Time, Fall: 2 μs
• Time, Rise: 2 μs
• Voltage, Esd: >4 kV
• Voltage, Input, High: 3.5 V
• Voltage, Input, Low: 0.5 V
• Voltage, Output, High: 2 V
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 2.5 to 5.5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

25AA640/25LC640
1.0
Absolute Maximum Ratings
V
All inputs and outputs w.r.t. V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-65°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
TABLE 1-1:
DS21223H-page 2
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Param.
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
Note 1:
CC
No.
.............................................................................................................................................................................7.0V
ELECTRICAL CHARACTERISTICS
V
V
V
V
V
V
I
I
C
I
I
I
LI
LO
CC
CC
CCS
OL
OH
IH
IH
IL
IL
INT
This parameter is periodically sampled and not 100% tested.
Sym
1
2
1
2
Read Operating Current
Write
DC CHARACTERISTICS
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal Capacitance
(all inputs and
outputs)
Standby Current
Characteristics
SS
........................................................................................................ -0.6V to V
(†)
Industrial (I):
Automotive (E): T
V
0.7 V
CC
Min
-0.3
-0.3
2.0
—
—
—
—
—
—
—
—
—
—
—
- 0.5
CC
V
V
0.2 V
CC
CC
Max
500
0.8
0.4
0.2
—
±1
±1
T
7
1
5
3
5
1
A
A
+ 1
+ 1
CC
= -40°C to +85°C
= -40°C to +125°C V
Units
mA
mA
mA
μA
μA
pF
μA
μA
μA
V
V
V
V
V
V
V
V
V
V
V
I
I
I
CS = V
CS = V
T
V
V
SO = Open
V
SO = Open
V
V
CS = V
V
CS = V
V
OL
OL
OH
A
CC
CC
CC
CC
CC
CC
CC
CC
CC
SS
SS
= 25°C, CLK = 1.0 MHz,
= 2.1 mA
= 1.0 mA, V
= -400 μA
≥ 2.7V (Note 1)
≥ 2.7V (Note 1)
< 2.7V (Note 1)
< 2.7V (Note 1)
= 5.0V (Note 1)
= 5.5V; F
= 2.5V; F
= 5.5V
= 2.5V
V
CC
CC
CC
CC
CC
CC
© 2008 Microchip Technology Inc.
, V
, V
= 5.5V, Inputs tied to V
= 2.5V, Inputs tied to V
= 1.8V to 5.5V
= 4.5V to 5.5V
IN
OUT
Conditions
CLK
CLK
= V
CC
= V
= 3.0 MHz;
= 2.0 MHz;
SS TO
= < 2.5V
SS TO
V
CC
V
CC
CC
+ 1.0V
CC
CC
or
or