SI7913DN-T1-E3 Siliconix / Vishay, SI7913DN-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7913DN-T1-E3
• Description: DUAL P-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI7913DN-T1-E3

• Channel Type: P
• Current, Drain: -7.4 A
• Fall Time: 225 ns
• Gate Charge, Total: 24 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: PowerPAK 1212-8
• Polarization: P-Channel
• Power Dissipation: 1.3 W
• Resistance, Drain To Source On: 0.037 Ohm
• Resistance, Thermal, Junction To Case: 5 °C/W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 44 °C/W
• Time, Rise: 110 ns
• Time, Turn-off Delay: 110 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 20 S
• Voltage, Breakdown, Drain To Source: –30 V
• Voltage, Diode Forward: –1.2 V
• Voltage, Drain To Source: –20 V
• Voltage, Forward, Diode: –1.2 V
• Voltage, Gate To Source: ±8 V
• Trenchfet® Power Mosfet: 1.8 V Rated
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72615.
Document Number: 72615
S-83050-Rev. C, 29-Dec-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
Single Pulse
0.02
0.05
0.1
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Square Wave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7913DN
www.vishay.com
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