DG444DY-E3 Siliconix / Vishay, DG444DY-E3 Datasheet - Page 3

• Manufacturer Part Number: DG444DY-E3
• Description: Switch; SPST; 16-Pin Narrow SOIC; 50 Ohms (Typ.); 0.01 nA (Typ.); 30 mA
• Manufacturer: Siliconix / Vishay
• Type: 4-Channelr

Specifications of DG444DY-E3

• Charge Injection: 1 pC
• Current, Source, Off-state: 0.50 nA
• Number Of Channels: 4
• Package: 16-Pin SOIC N
• Package Type: 16-Pin SOIC N
• Power Consumption: 0.022 μW
• Primary Type: Analog
• Resistance, Drain To Source On: 50 Ohms
• Switch Type: SPST
• Time, Turn-on: 120 ns
• Voltage, Supply: 44
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Notes:
a.
b.
c.
d.
e.
Document Number: 70054
S-52433—Rev. F, 06-Sep-99
Analog Switch
Analog Signal Range
Drain-Source On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
Room = 25 C, Full = as determined by the operating temperature suffix.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Guaranteed by design, not subject to production test.
V
IN
= input voltage to perform proper function.
Parameter
d
d
Symbol
V
r
ANALOG
DS(on)
I
t
t
GND
OFF
ON
I+
Q
I–
I
L
Unless Otherwise Specified
C
R
L
L
L
V
= 1 nF, V
V+ = 13.2 V, V
I
V
= 1 k , C
L
S
V+ = 10.8 V, V
L
Test Conditions
= 5 V, V
= –10 mA, V
= 5.25 V, V
V+ = 12 V, V– = 0 V
V
V
S
See Figure 2
,
IN
IN
gen
IN
L
L
= 0 or 5 V
= 0 or 5 V
Fi
= 35 pF, V
= 2.4 V, 0.8 V
= 6 V, R
IN
IN
D
L
= 0 or 5 V
= 0 or 5 V
= 3 V, 8 V
p ,
= 5.25 V
2
gen
S
S
= 8 V
= 0
e
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
a
Min
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–1
–5
–1
–5
0
b
Vishay Siliconix
–40 to 85 C
D Suffix
–0.0001
–0.001
Typ
0.001
0.001
100
300
60
2
c
DG444/445
Max
160
200
450
200
12
1
5
1
5
b
Unit
pC
ns
ns
V
A
A
A
4-3