VTT1015H Excelitas Technologies Sensors, VTT1015H Datasheet
VTT1015H
Manufacturer Part Number
VTT1015H
Description
PHOTOTRANSISTORS
Manufacturer
Excelitas Technologies Sensors
Datasheet
1.VTT1015H.pdf
(1 pages)
Specifications of VTT1015H
Lead Free Status / Rohs Status
RoHS Compliant part
RoHS Compliant
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in
a flat lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection from hostile
environments. The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE10xxH series of IREDs.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
Part Number
.050" NPN Phototransistors
TO-46 Flat Window Package
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7
Refer to General Product Notes, page 2.
VTT1015H
VTT1016H
VTT1017H
Min.
0.4
1.0
2.5
mA
Max.
Light Current
—
—
—
l
C
fc (mW/cm
V
CE
100 (5)
100 (5)
100 (5)
= 5.0 V
H
2
)
PACKAGE DIMENSIONS
Max.
(nA)
Dark Current
25
25
25
H = 0
l
CEO
(Volts)
V
20
20
10
CE
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Continuous Power Dissipation:
Maximum Current:
Lead Soldering Temperature:
l
Breakdown
C
Volts, Min.
V
Collector
= 100 µA
BR(CEO)
102
H = 0
40
30
20
Storage Temperature:
Operating Temperature:
Derate above 30°C:
(1.6 mm from case, 5 sec. max.)
(See also typical curves, pages 91-92)
Phone: 877-734-6786 Fax: 450-424-3413
CASE 1 TO-46 (FLAT WINDOW)
Breakdown
l
E
Volts, Min.
V
Emitter
= 100 µA
BR(ECO)
H = 0
inch (mm)
6.0
6.0
4.0
CHIP TYPE: 50T
VTT1015H, 16H, 17H
l
Volts, Max.
C
Saturation
H = 400 fc
V
Voltage
= 1.0 mA
CE(SAT)
0.40
0.40
0.40
Rise/Fall Time
www.perkinelmer.com/opto
l
R
C
µsec, Typ.
L
= 1.0 mA
= 100
t
5.0
5.0
8.0
R
-40°C to 110°C
3.12 mW/°C
-40°C to 110°C
250 mW
200 mA
260°C
/t
F
Response
Angular
±35°
±35°
±35°
Typ.
1/2
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